RN1104MFV Todos los transistores

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RN1104MFV . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN1104MFV

Código: XD

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 0.7 pF

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: SOT723_VESM

Búsqueda de reemplazo de transistor bipolar RN1104MFV

 

RN1104MFV Datasheet (PDF)

1.1. rn1101mfv rn1102mfv rn1103mfv rn1104mfv rn1105mfv rn1106mfv.pdf Size:1016K _toshiba

RN1104MFV
RN1104MFV

RN1101MFV?RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101MFV,RN1102MFV,RN1103MFV RN1104MFV,RN1105MFV,RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of parts,

4.1. rn1101fs rn1102fs rn1103fs rn1104fs rn1105fs rn1106fs.pdf Size:126K _toshiba

RN1104MFV
RN1104MFV

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever m

5.1. rn1107ct rn1109ct 090413.pdf Size:151K _toshiba

RN1104MFV
RN1104MFV

RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Unit: mm Inverter Circuit Applications 0.60.05 Interface Circuit Applications 0.50.03 Driver Circuit Applications 3 Incorporating a bias resistor into a transistor reduces the number of parts, which enable the

5.2. rn1107mfv rn1108mfv rn1109mfv.pdf Size:361K _toshiba

RN1104MFV
RN1104MFV

RN1107MFV~RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV Unit: mm 1.2 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduces th

5.3. rn1101f-1106f xa-b-c-d-e-f sot490.pdf Size:147K _toshiba

RN1104MFV
RN1104MFV

RN1101F?RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F~RN2106F Equivalent Circu

5.4. rn1101ct rn1106ct 090413.pdf Size:167K _toshiba

RN1104MFV
RN1104MFV

RN1101CT ~ RN1106CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101CT,RN1102CT,RN1103CT RN1104CT,RN1105CT,RN1106CT Switching Applications Unit: mm Inverter Circuit Applications 0.60.05 0.50.03 Interface Circuit Applications Driver Circuit Applications 3 Incorporating a bias resistor into a transistor reduces parts count.

5.5. rn1101ft-1106ft xa-b-c-d-e-f sot623.pdf Size:211K _toshiba

RN1104MFV
RN1104MFV

RN1101FT~RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor int

5.6. rn1107 rn1109 100406.pdf Size:339K _toshiba

RN1104MFV
RN1104MFV

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2107 to 2109 Equivalent Circuit and Bias Resistor Valu

5.7. rn1101-1106 xa-b-c-d-e-f sot416.pdf Size:134K _toshiba

RN1104MFV
RN1104MFV

RN1101?RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101,RN1102,RN1103 RN1104,RN1105,RN1106 Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101~RN2106 Equivalent Circuit and Bias R

5.8. rn1107act rn1109act 090413.pdf Size:164K _toshiba

RN1104MFV
RN1104MFV

RN1107ACT ~ RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications TOP View 0.60.05 Extra small package(CST3) is applicable for extra high density 0.50.03 fabrication. Incorporating a bias resistor into

5.9. rn1101 rn1106 071101.pdf Size:566K _toshiba

RN1104MFV
RN1104MFV

RN1101?RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Switching, Inverter Circuit, Interface Circuit Unit: mm and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2101~ RN2106 Equivalent Ci

5.10. rn1101fs-1106fs l0-1-2-3-4-5 sot823.pdf Size:98K _toshiba

RN1104MFV
RN1104MFV

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever m

5.11. rn1101act rn1106act 100311.pdf Size:168K _toshiba

RN1104MFV
RN1104MFV

RN1101ACT ~ RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Unit: mm Inverter Circuit Applications 0.60.05 0.50.03 Interface Circuit Applications Driver Circuit Applications 3 Incorporating a bias resistor into a transistor reduces th

5.12. rn1107-1108-1109 xh xi xj sot416.pdf Size:138K _toshiba

RN1104MFV
RN1104MFV

RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2107~2109 Equivalent Circuit and Bias Resistor Values Type No. R

5.13. rn1107fs rn1108fs rn1109fs.pdf Size:129K _toshiba

RN1104MFV
RN1104MFV

RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and s

Otros transistores... RN1103ACT , RN1103CT , RN1103FS , RN1103MFV , RN1103 , RN1104ACT , RN1104CT , RN1104FS , MJE13005 , RN1104 , RN1105ACT , RN1105CT , RN1105FS , RN1105MFV , RN1105 , RN1106ACT , RN1106CT .

 


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