RN1107ACT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN1107ACT
Código: C6
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 0.7 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT883 CST3
Búsqueda de reemplazo de transistor bipolar RN1107ACT
RN1107ACT Datasheet (PDF)
rn1107act rn1109act.pdf
RN1107ACT ~ RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications TOP View 0.60.05 Extra small package(CST3) is applicable for extra high density 0.50.03 fabrication. Incorporating a bias resis
rn1107 rn1109.pdf
RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2107 to 2109 Equivalent Circuit and Bias Resistor V
rn1107mfv rn1108mfv rn1109mfv.pdf
RN1107MFV~RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV Unit: mm1.2 0.05Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 11 Incorporating a bias resistor into the transistor reduc
rn1107ct rn1109ct.pdf
RN1107CT ~ RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of parts, which e
rn1107fs rn1108fs rn1109fs.pdf
RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment
rn1107-1108-1109 xh xi xj sot416.pdf
RN1107~1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107,RN1108,RN1109 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2107~2109 Equivalent Circuit and Bias Resistor Values Type No
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
