RN1111FS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mmJEDEC Incorporating a bias resistor into a transistor reduces parts count. JEITA Reducing the parts count enables the manufacture of ever more TOSH

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Absolute Maximum Ratings (Ta

RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Maximum Ratings (Ta = 25C)