RN1111FS Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RN1111FS

Código: LF

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 1.2 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: FSM

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RN1111FS datasheet

 ..1. Size:130K  toshiba
 rn1110fs rn1111fs.pdf pdf_icon

RN1111FS

RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm JEDEC Incorporating a bias resistor into a transistor reduces parts count. JEITA Reducing the parts count enables the manufacture of ever more TOSH

 7.1. Size:281K  toshiba
 rn1110f rn1111f.pdf pdf_icon

RN1111FS

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Absolute Maximum Ratings (Ta

 7.2. Size:121K  toshiba
 rn1110ft rn1111ft .pdf pdf_icon

RN1111FS

RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

 7.3. Size:105K  toshiba
 rn1110f rn1111f sot490.pdf pdf_icon

RN1111FS

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Maximum Ratings (Ta = 25 C)

MOSTRAR MÁS

Otros transistores... RN1109, RN1110ACT, RN1110CT, RN1110FS, RN1110MFV, RN1110, RN1111ACT, RN1111CT, BD139, RN1111F, RN1111MFV, RN1111, RN1112ACT, RN1112CT, RN1112FS, RN1112MFV, RN1112