RN1116MFV . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RN1114MFVRN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Unit: mmDriver Circuit Applications 1.2 0.05 With built-in bias resistors 0.80 0.05 Simplify circuit design Reduce a quantity of parts and manufac

RN1110ACT, RN1111ACT NPN (PCT) () RN1110ACT,RN1111ACT : mm 0.60.05 0.50.03 (CST3)

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110,RN1111 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110~RN2111 Equivalent Circuit Maximum Ratings (Ta = 25C) JEDEC

RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2114 to 2118 Equivalent Circuit a

RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit: mm1.2 0.05Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 Incorporating a bias resistor into the transistor reduces the numb

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Absolute Maximum Ratings (Ta

RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mmJEDEC Incorporating a bias resistor into a transistor reduces parts count. JEITA Reducing the parts count enables the manufacture of ever more TOSH

RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114~2118 Equivalent Circuit and Bias Resistor

RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1119MFV Switching Applications Unit: mmInverter Circuit Applications 1.20.05Interface Circuit Applications 0.80.05Driver Circuit Applications 1 With built-in bias resistors 2 3 Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2119MFV

RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112,RN1113 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112, RN2113 Equivalent Circuit Maximum Ratings (Ta = 25C) Char

RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114F to 2118F Equivalent Circuit and Bi

RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV Unit: mmSwitching, Inverter Circuit, Interface Circuit and 1.2 0.05Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 11 Incorporating a bias resistor into the transistor reduces the num

RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN2114F

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Maximum Ratings (Ta = 25C)

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110, RN1111 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2110 and RN2111

RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112, RN1113 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified process Complementary to RN2112 and RN2113 Equivalent Circuit Absolute Maximum Ratings (Ta = 25

RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of parts, which enab

RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25

RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe

RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count e

RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.