RN1310 Todos los transistores

 

RN1310 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN1310
   Código: XK
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT323 SC70 USM
     - Selección de transistores por parámetros

 

RN1310 Datasheet (PDF)

 ..1. Size:261K  toshiba
 rn1310 rn1311.pdf pdf_icon

RN1310

RN1310,RN1311 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1310,RN1311 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2310 and RN2311 Equivalent Circui

 9.1. Size:159K  toshiba
 rn1314-rn1318.pdf pdf_icon

RN1310

RN1314RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314~RN2318 Equivalent Circuit and Bias Res

 9.2. Size:287K  toshiba
 rn1312 rn1313.pdf pdf_icon

RN1310

RN1312,RN1313 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1312,RN1313 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2312, RN2313 Equivalent Circuit Absolute Maximum Ratings (Ta = 25

 9.3. Size:455K  toshiba
 rn1314 rn1315 rn1316 rn1317 rn1318.pdf pdf_icon

RN1310

RN1314RN1318 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1314,RN1315,RN1316 RN1317,RN1318 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2314~RN2318 Equivalent Circuit and Bias Res

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD882SQ-E | DTC115EEB

 

 
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