2N5762 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5762
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.04 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3700 MHz
Capacitancia de salida (Cc): 0.8 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: X115
Búsqueda de reemplazo de transistor bipolar 2N5762
2N5762 Datasheet (PDF)
2n5769.pdf
Discrete POWER & SignalTechnologies2N5769C TO-92BENPN Switching TransistorThis device is designed for high speed saturated switchingapplications at currents to 100 mA. Sourced from Process 21.See PN2369A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VV Collector-Base Voltage
2n5758 2n5759 2n5760.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol
2n5758 2n5759 2n5760.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5758 2N5759 2N5760 DESCRIPTION With TO-3 package Low collector saturation voltage Excellent safe operating area APPLICATIONS For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
Otros transistores... 2N574A , 2N575 , 2N5758 , 2N5759 , 2N575A , 2N576 , 2N5760 , 2N5761 , 2SC2625 , 2N5763 , 2N5764 , 2N5765 , 2N5766 , 2N5767 , 2N5768 , 2N5769 , 2N576A .
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