RN2905 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN2905
Código: YE
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SOT363 SC88 US6
Búsqueda de reemplazo de transistor bipolar RN2905
RN2905 Datasheet (PDF)
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RN2901FS~RN2906FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2901FS,RN2902FS,RN2903FS RN2904FS,RN2905FS,RN2906FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1
rn2901fe rn2906fe.pdf
RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a trans
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rn2907 rn2909.pdf
RN2907~RN2909 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2907,RN2908,RN2909 Switching, Inverter Circuit, Interface Circuit Unit in mmAnd Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementa
rn2907fe rn2909fe.pdf
RN2907FE~RN2909FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2907FE,RN2908FE,RN2909FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Red
rn2901afs rn2906afs.pdf
RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-p
rn2907fs rn2909fs.pdf
RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2907FS,RN2908FS,RN2909FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications. 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bias
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