RN2973FS
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RN2973FS
Código: KJ
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 1.2
pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta:
SOT963
FS6
Búsqueda de reemplazo de transistor bipolar RN2973FS
RN2973FS
Datasheet (PDF)
..1. Size:116K toshiba
rn2972fs rn2973fs.pdf
RN2972FS,RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2972FS,RN2973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) 1.00.05package. 0.80.05 0.10.050.10.05 Incorporating a bias resistor into a
8.1. Size:139K toshiba
rn2972ct rn2973ct.pdf
RN2972CT, RN2973CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2972CT, RN2973CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 0.150.03 Two devices are incorporated into a fine pitch Small Mold (6pin) package. Incorporating a bias resistor into a tra
8.2. Size:144K toshiba
rn2972hfe rn2973hfe.pdf
RN2972HFE,RN2973HFE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2972HFE,RN2973HFE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reduci
9.1. Size:112K toshiba
rn2970-rn2971.pdf
RN2970,RN2971 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2970,RN2971 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1
9.2. Size:116K toshiba
rn2970fs rn2971fs.pdf
RN2970FS,RN2971FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2970FS,RN2971FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. 1 6 Incorporating a bias resistor i
9.3. Size:140K toshiba
rn2970ct rn2971ct.pdf
RN2970CT,RN2971CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN2970CT,RN2971CT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.05 0.150.03 Two devices are incorporated into a fine pitch Small Mold (6 pin) package. Incorporating a bias resistor into a tran
9.4. Size:120K toshiba
rn2975.pdf
RN2975 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN2975 Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications. Two devices are incorporated into an Ultra-Super-Mini (6-pin) package Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enable
9.5. Size:168K toshiba
rn2970fe-rn2971fe.pdf
RN2970FE,RN2971FE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN2970FE,RN2971FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing t
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