RN4983FE Todos los transistores

 

RN4983FE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RN4983FE
   Código: 6C
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT563 ES6

 Búsqueda de reemplazo de transistor bipolar RN4983FE

 

RN4983FE Datasheet (PDF)

 ..1. Size:103K  toshiba
rn4983fe.pdf

RN4983FE
RN4983FE

RN4983FE TOSHIBA Transistor Silicon NPN PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4983FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts

 7.1. Size:143K  toshiba
rn4983fs.pdf

RN4983FE
RN4983FE

RN4983FS TOSHIBA Transistor Silicon NPNPNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN4983FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. Incorporating a bias resistor into a transistor

 8.1. Size:168K  toshiba
rn4983afs.pdf

RN4983FE
RN4983FE

RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. Incorporating a bias resistor into the t

 8.2. Size:252K  toshiba
rn4983.pdf

RN4983FE
RN4983FE

RN4983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) RN4983 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing pro

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