2SA1933 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1933
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.8 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Capacitancia de salida (Cc): 170 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TPL
Búsqueda de reemplazo de transistor bipolar 2SA1933
2SA1933 Datasheet (PDF)
2sa1937.pdf
2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit: mm High voltage: VCEO = -600 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -600 VCollector-emitter voltage VCEO -600 VEmitter-base voltage VEBO -7 VDC IC -0.5 Collector current A Pulse ICP -1 Base current IB
2sa1931.pdf
2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications Unit: mm Low saturation voltage: VCE (sat) = -0.4 V (max) High-speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitt
2sa1930.pdf
2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit: mmDriver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -180 VCollector-emitter voltage VCEO -180 VEmitter-base v
2sa1939.pdf
2SA1939 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC5196ABSOLUTE MAXIMUM RATING (Ta=25cc)ccCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collec
2sa1939.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION With TO-3P(I) package Complement to type 2SC5196 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbo
2sa1930i.pdf
2SA1930I(BR3CA1930I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 PNP Silicon PNP transistor in a TO-251 Plastic Package. / Features 2SC5171I(BR3DA5171I) High fT, complementary pair with 2SC5171I(BR3DA5171I). / Applications General power and d
2sa1930s.pdf
2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features: High f , complementary pair with 2SC5171S(3DA5171S). T/Absolute maximum ratings(Ta=25)
2sa1930 3ca1930.pdf
2SA1930(3CA1930) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171(3DA5171) Features: High f , complementary pair with 2SC5171(3DA5171). T/Absolute maximum ratings(Ta=25) Sym
2sa1930s 3ca1930s.pdf
2SA1930S(3CA1930S) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171S(3DA5171S) Features: High f , complementary pair with 2SC5171S(3DA5171S). T/Absolute maximum ratings(Ta=25)
2sa1930i 3ca1930i.pdf
2SA1930I(3CA1930I) PNP /SILICON PNP TRANSISTOR : Purpose: General power and driver stage amplifier applications. 2SC5171I(3DA5171I) Features: High f , complementary pair with 2SC5171I(3DA5171I). T/Absolute maximum ratings(Ta=25)
2sa1931.pdf
isc Silicon PNP Power Transistor 2SA1931DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC3299Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sa1932.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1932DESCRIPTIONHigh collector breakdown voltageComplementary to 2SC5174100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sa1939.pdf
isc Silicon PNP Power Transistor 2SA1939DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC5196Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BUF420AI
History: BUF420AI
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Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050