2SA1962 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -230 V (min) Complementary to 2SC5242 Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VColle

January 20092SA1962/FJA4213PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -17ATO-3P High Power Dissipation : 130watts 1 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excel

JMnic Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION With TO-3P(I) package Complement to type 2SC5242 High collector voltage: VCEO=-230V(Min) APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) Good Linearity of hFE Complement to Type 2SC5242 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Ordering number:5098PNP Epitaxial Planar Silicon Transistor2SA1969High-Frequency Medium-Output Amplifier,Medium-Current Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions High fT (fT=1.7GHz typ).unit:mm Large current capacity (IC=400mA).2038A[2SA1969]1 : Base2 : Collector3 : EmitterSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum R

Ordering number:5182NPN Triple Diffused Planar Silicon Transistor2SA1967High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Cob (Cob typ=2.2pF).2010C High reliability (Adoption of HVP process).[2SA1967]JEDEC : TO-220AB 1 : BaseEIAJ : SC46 2 : CollectorSpecifications3

Ordering number:5031PNP Epitaxial Planar Silicon Transistor2SA1965Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SA1965-unit:mmapplied sets to be made small and slim.2106A Small output capacitance.[2SA1965] Low collectot-to-emitter saturation voltage. Small ON resistance.1 : Base2 : Emitter3 : CollectorSANY

Ordering number:5230PNP Epitaxial Planar Silicon Transistor2SA1963High-Frequecy Low-Noise Amplifier,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low noise : NF=1.5dB typ (f=1GHz).unit:mm High gain : | S2le |2=9dB typ (f=1GHz).2018B High cutoff frequency : fT=5GHz typ.[2SA1963]1 : Base2 : Emitter3 : CollectorSpecificationsSANYO : CP

Ordering number : ENN5183B2SA1968LSPNP Triple Diffused Planar Silicon Transistor2SA1968LSHigh-Voltage Amplifier, High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=--900V).unit : mm Small Cob(Cob typ=2.2pF).2079D High reliability(Adoption of HVP process).[2SA1968LS] Package of full isolation type.10.0 4.53.2

Ordering number:5183NPN Triple Diffused Planar Silicon Transistor2SA1968High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Cob (Cob typ=2.2pF).2079B High reliability (Adoption of HVP process).[2SA1968] Package of full isolation type.1 : Base2 : Collector3 : Emitte

2SA1964TransistorsTransistors2SC5248(SPEC-A315)(SPEC-C315)282

2SA1964TransistorsTransistors2SC5248(SPEC-A315)(SPEC-C315)282

Transistor2SA1961Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC54192.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to base voltage VCBO 200 V1 2 3Col

Transistor2SA1961Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC54192.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to base voltage VCBO 200 V1 2 3Col

2SA1960Silicon NPN EpitaxialADE-208-3921st. EditionApplication Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SC5225.Features High voltage large current operation.VCEO = 80 V, IC = 300 mA High fT.fT = 1.3 GHz Small output capacitance.Cob =

2SA1964(3CA1964) PNP /SILICON PNP TRANSISTOR () Purpose: High-voltage switching(audio output amplifier transistor, stabilized power supply transistor). h f 2SC5248(3DA5248) TFEFeatures: Flat DC curren

isc Silicon PNP Power Transistor 2SA1964DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SC5248Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXI