2SA2059 Todos los transistores

 ..1. Size:182K  toshiba
 2sa2059.pdf

2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (I = -0.5 A) C Low collector-emitter saturation voltage V = -0.19 V (max) CE (sat) High-speed switching t = 40 ns (typ.) f Maximum Ratings (Ta = 25 C) Characterist

 8.1. Size:149K  toshiba
 2sa2056.pdf

2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) High-speed switching tf = 90 ns (typ.) Maximum Ratings (Ta = 25 C) Characteristics Symb

 8.2. Size:150K  toshiba
 2sa2058.pdf

2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage VCE (sat) = -0.19 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteri

 8.3. Size:80K  panasonic
 2sa2057.pdf

Power Transistors 2SA2057 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 Power supply for audio & visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High speed switching (tstg storage time/tf fall time is short) Low collector-emitter saturation voltage VCE(sat) 1.4 0.2 2.6 0.1 Supe

 8.4. Size:415K  blue-rocket-elect
 2sa2050.pdf

2SA2050(BR3CA2050F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV

 8.5. Size:1247K  kexin
 2sa2058.pdf

SMD Type Transistors PNP Transistors 2SA2058 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features High DC current gain hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage 1 2 VCE (sat) = -0.19 V (max) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 High-speed switching tf = 25 ns (typ.) 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Max

 8.6. Size:166K  inchange semiconductor
 2sa2057.pdf

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2057 DESCRIPTION High speed switching Low collector-emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply for audio & visual equipments such as TVS and VCRS Industrial equipments such as DC-DC converters ABSOLU

 8.7. Size:204K  inchange semiconductor
 2sa2050.pdf

isc Silicon PNP Power Transistor 2SA2050 DESCRIPTION High DC current amplifier rate h 60-240@VCE=-5V,IC=-0.2A FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General Purpose Switching and Amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emitter Vo