2SC5358 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5358
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 230 V
Tensión colector-emisor (Vce): 230 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hFE): 55
Encapsulados: TO3PN
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2SC5358 datasheet
..2. Size:128K jmnic
2sc5358.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5358 DESCRIPTION With TO-3P(I) package Complement to type 2SA1986 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-
..3. Size:194K inchange semiconductor
2sc5358.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5358 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1986 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco
8.3. Size:175K toshiba
2sc5356.pdf
2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times tf = 0.5 s (max) (I = 1.2 A) C High collectors breakdown voltage V = 800 V CEO High DC current gain h = 15 (min) (I = 0.15 A) FE C Maximum Ra
8.5. Size:121K toshiba
2sc5359.pdf
2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit mm High breakdown voltage V = 230 V CEO Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifier s output stage. Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter volta
8.7. Size:151K toshiba
2sc5355.pdf
2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times tr = 0.5 s (max), t = 0.3 s (max) f High collector breakdown voltage V = 400 V CEO High DC current gain h = 20 (min) FE Maximum Ratings (Ta = 25 C)
8.8. Size:273K utc
2sc5353.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 1 TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 1 1 TO-220 TO-220F FEATURES * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) * High collectors breakdown voltage VCEO = 700V 1
8.9. Size:275K utc
2sc5353b.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1 TRANSISTOR TO-126 TO-126C DESCRIPTION 1 1 TO-220 TO-220F Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. FEATURES 1 1 * Excellent switching times tR = 0.7 s(MAX), tF = 0.5 s (MAX) TO-220F1 TO-251 * High collectors breakdown
8.10. Size:54K hitachi
2sc535.pdf
2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC535 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC
8.11. Size:208K inchange semiconductor
2sc5353.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5353 DESCRIPTION Collector Emitter Sustaining Voltage V = 800V(Min.) CEO(SUS) Low Collector Saturation Voltage V =1V(Max) @ I = 1.2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and low cost switch-mode power
8.12. Size:216K inchange semiconductor
2sc5352.pdf
isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.13. Size:193K inchange semiconductor
2sc5359.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5359 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 230V(Min) (BR)CEO Complement to Type 2SA1987 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Reco
8.14. Size:217K inchange semiconductor
2sc5354.pdf
isc Silicon NPN Power Transistor 2SC5354 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed and high voltage switching applications. Switching regulator applications. High speed DC-DC converter applications. ABSOLUTE M
Otros transistores... 2SC5279, 2SC5307, 2SC5351, 2SC5352, 2SC5353, 2SC5354, 2SC5355, 2SC5356, 2N5551, 2SC5359, 2SC5361, 2SC5368, 2SC5439, 2SC5458, 2SC5459, 2SC5460, 2SC5465
