2SC5563 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5563
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 1500 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO220NIS
Búsqueda de reemplazo de 2SC5563
- Selecciónⓘ de transistores por parámetros
2SC5563 datasheet
8.2. Size:57K sanyo
2sa2016 2sc5569.pdf 
Ordering number ENN6309B 2SA2016 / 2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2016 / 2SC5569 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
8.3. Size:49K sanyo
2sc5565.pdf
Ordering number ENN6306 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2012/2SC5565 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2012/2SC5565] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-
8.4. Size:50K sanyo
2sa2016 2sc5569.pdf
Ordering number ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2016/2SC5569] 4.5 Adoption of FBET and MBIT processes. 1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High
8.5. Size:50K sanyo
2sa2011 2sc5564.pdf
Ordering number ENN6305 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2011/2SC5564 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2011/2SC5564] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed
8.6. Size:50K sanyo
2sa2013 2sc5566.pdf
Ordering number ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2038A Features [2SA2013/2SC5566] 4.5 Adoption of FBET and MBIT processes. 1.5 1.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi
8.7. Size:49K sanyo
2sa2014 2sc5567.pdf
Ordering number ENN6321 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2014/2SC5567 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2014/2SC5567] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
8.8. Size:57K sanyo
2sa2013 2sc5566.pdf
Ordering number ENN6307B 2SA2013 / 2SC5566 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2013 / 2SC5566 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
8.9. Size:49K sanyo
2sa2015 2sc5568.pdf
Ordering number ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2163 Features [2SA2015/2SC5568] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
8.10. Size:353K onsemi
2sa2016 2sc5569.pdf
Ordering number EN6309D 2SA2016/2SC5569 Bipolar Transistor http //onsemi.com (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
8.11. Size:358K onsemi
2sa2013 2sc5566.pdf
Ordering number EN6307C 2SA2013/2SC5566 Bipolar Transistor http //onsemi.com (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
8.12. Size:257K utc
2sc5569.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. 1 SOT-89 *High allowable power dissipation. *Complementary to 2SA2016. APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes ORDERING INFORMATION Ord
Otros transistores... 2SC5460, 2SC5465, 2SC5466, 2SC5548, 2SC5548A, 2SC5549, 2SC5550, 2SC5562, TIP3055, 2SC5692, 2SC5703, 2SC5712, 2SC5713, 2SC5714, 2SC5738, 2SC5755, 2SC5784
