2SC5563
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5563
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10
W
Tensión colector-base (Vcb): 1500
V
Tensión colector-emisor (Vce): 1500
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.02
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 2
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO220NIS
- Selección de transistores por parámetros
2SC5563
Datasheet (PDF)
8.2. Size:57K sanyo
2sa2016 2sc5569.pdf 

Ordering number : ENN6309B2SA2016 / 2SC5569PNP / NPN Epitaxial Planar Silicon Transistors2SA2016 / 2SC5569DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
8.3. Size:49K sanyo
2sc5565.pdf 

Ordering number:ENN6306PNP/NPN Epitaxial Planar Silicon Transistors2SA2012/2SC5565DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2012/2SC5565]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-
8.4. Size:50K sanyo
2sa2016 2sc5569.pdf 

Ordering number:ENN6309APNP/NPN Epitaxial Planar Silicon Transistors2SA2016/2SC5569DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2016/2SC5569]4.5 Adoption of FBET and MBIT processes.1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High
8.5. Size:50K sanyo
2sa2011 2sc5564.pdf 

Ordering number:ENN6305PNP/NPN Epitaxial Planar Silicon Transistors2SA2011/2SC5564DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2011/2SC5564]4.5 Adoption of MBIT processes.1.51.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed
8.6. Size:50K sanyo
2sa2013 2sc5566.pdf 

Ordering number:ENN6307APNP/NPN Epitaxial Planar Silicon Transistors2SA2013/2SC5566DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2038AFeatures [2SA2013/2SC5566]4.5 Adoption of FBET and MBIT processes.1.51.6 High current capacitance. Low collector-to-emitter saturation voltage. Hi
8.7. Size:49K sanyo
2sa2014 2sc5567.pdf 

Ordering number:ENN6321PNP/NPN Epitaxial Planar Silicon Transistors2SA2014/2SC5567DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2014/2SC5567]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
8.8. Size:57K sanyo
2sa2013 2sc5566.pdf 

Ordering number : ENN6307B2SA2013 / 2SC5566PNP / NPN Epitaxial Planar Silicon Transistors2SA2013 / 2SC5566DC / DC Converter ApplicationsApplications Relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall packag
8.9. Size:49K sanyo
2sa2015 2sc5568.pdf 

Ordering number:ENN6308PNP/NPN Epitaxial Planar Silicon Transistors2SA2015/2SC5568DC/DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm2163Features [2SA2015/2SC5568]4.5 Adoption of MBIT processes.1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed sw
8.10. Size:353K onsemi
2sa2016 2sc5569.pdf 

Ordering number : EN6309D2SA2016/2SC5569Bipolar Transistorhttp://onsemi.com(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
8.11. Size:358K onsemi
2sa2013 2sc5566.pdf 

Ordering number : EN6307C2SA2013/2SC5566Bipolar Transistorhttp://onsemi.com(-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCPApplicaitons Relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall package facilitales mini
8.12. Size:257K utc
2sc5569.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC5569 NPN SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. 1SOT-89*High allowable power dissipation. *Complementary to 2SA2016. APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes ORDERING INFORMATION Ord
Otros transistores... 2N3192
, 2N3193
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.
History: BC337A-16
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