2SC5713 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC5713

Código: 2C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 10 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 28 pF

Ganancia de corriente contínua (hFE): 400

Encapsulados: PW-MINI SC62

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2SC5713 datasheet

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 2sc5713.pdf pdf_icon

2SC5713

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 50 ns (typ.) f Maximum Ratings (T

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 2sc5716.pdf pdf_icon

2SC5713

2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit mm Color TV High voltage V = 1700 V CBO High speed t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector-base vo

 8.2. Size:166K  toshiba
 2sc5714.pdf pdf_icon

2SC5713

2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 90 ns (typ.) f Maximum Ratings (T

 8.3. Size:146K  toshiba
 2sc5712.pdf pdf_icon

2SC5713

2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications Unit mm DC-DC Converter Applications DC-AC Converter Applications High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) High-speed switching tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) C

MOSTRAR MÁS

Otros transistores... 2SC5548A, 2SC5549, 2SC5550, 2SC5562, 2SC5563, 2SC5692, 2SC5703, 2SC5712, 13009, 2SC5714, 2SC5738, 2SC5755, 2SC5784, 2SC5785, 2SC5810, 2SC5819, 2SC5886