2SC6078 Todos los transistores

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2SC6078 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC6078

Código: C6078

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.8 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150 MHz

Capacitancia de salida (Cc): 14 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TPL

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2SC6078 Datasheet (PDF)

1.1. 2sc6078.pdf Size:270K _update

2SC6078
2SC6078

2SC6078 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6078 ○ Power Amplifier Applications Unit: mm ○ Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) • High-speed switching: tstg = 0.4 μs (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V

4.1. 2sc6075.pdf Size:201K _update

2SC6078
2SC6078

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit: mm Power Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 μs (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160

4.2. 2sc6077.pdf Size:302K _update

2SC6078
2SC6078

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 ○ Power Amplifier Applications Unit: mm ○ Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) • High-speed switching: tstg = 0.4 μs (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-ba

4.3. 2sc6072.pdf Size:259K _update

2SC6078
2SC6078

2SC6072 東芝複合デバイス シリコンNPNエピタキシャル形トランジスタ 2SC6072 ○ 電力増幅用 単位: mm ○ 励振段電力増幅用 • トランジション周波数が高い。 :fT=200MHz(標準) 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ ・ ベ ー ス 間 電 圧 VCBO V 180 コレクタ・エミッタ間

4.4. 2sc6076 091221.pdf Size:196K _toshiba

2SC6078
2SC6078

2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching: tstg = 0.4 ?s (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter vo

4.5. 2sc6079 070607.pdf Size:188K _toshiba

2SC6078
2SC6078

2SC6079 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6079 Power Amplifier Applications Unit: mm Power Switching Applications Low collector saturation voltage: VCE (sat) = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 ?s (typ) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage VCEX 160 V

Otros transistores... 2SC6052 , 2SC6060 , 2SC6061 , 2SC6062 , 2SC6072 , 2SC6075 , 2SC6076 , 2SC6077 , BC147 , 2SC6079 , 2SC6087 , 2SC6124 , 2SC6125 , 2SC6126 , 2SC6127 , 2SC6136 , 2SC6139 .

 


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