2SC6136 Todos los transistores

 ..1. Size:191K  toshiba
 2sc6136.pdf

2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltag

 8.1. Size:144K  toshiba
 2sc6134.pdf

2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) 3 2 High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (

 8.2. Size:140K  toshiba
 2sc6133.pdf

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 1.7 0.1 High DC current gain hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) 3 2 High-speed switching tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Char

 8.3. Size:230K  toshiba
 2sc6132.pdf

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 2sc6139.pdf

2SC6139 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6139 Audio Frequency Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Small collector output capacitance Cob = 12pF (typ.) High transition frequency fT = 100MHz (typ.) Complementary to 2SA2219 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Co

 8.5. Size:140K  toshiba
 2sc6135.pdf

2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 1 High DC current gain hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage VCE (sat) = 0.17 V (max) 3 2 High-speed switching tf = 85 ns (typ.) Absolute Maximum Rating