TPC6504 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TPC6504
Código: H2D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta: VS6
Búsqueda de reemplazo de transistor bipolar TPC6504
TPC6504 Datasheet (PDF)
tpc6504.pdf
TPC6504 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6504 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain : hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation voltage : VCE (sat) = 0.17 V (max) High-speed switching : tf = 85 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characte
tpc6501 .pdf
TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteris
tpc6503.pdf
TPC6503 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6503 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri
tpc6501.pdf
TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25C) Characteristics Symb
tpc6502.pdf
TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
