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TPCP8901 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TPCP8901
   Código: 8901
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.48 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: PS8
 

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TPCP8901 Datasheet (PDF)

 ..1. Size:247K  toshiba
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TPCP8901

TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Unit: mmSwitching Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = -0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) Low collector-emitter saturation : PNP VCE (sat) =

 ..2. Size:224K  toshiba
tpcp8901 .pdf pdf_icon

TPCP8901

TPCP8901 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8901 Portable Equipment Applications Unit: mmSwitching Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = -0.1 A) :NPN hFE = 400 to 1000 (IC = 0.1 A) 0.475 1 4B0.05 M B Low collector-emitter satur

 7.1. Size:243K  toshiba
tpcp8902 .pdf pdf_icon

TPCP8901

TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Unit: mmSwitching Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = -0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) 0.475 1 4B0.05 M B Low collector-emitter satura

 7.2. Size:242K  toshiba
tpcp8902.pdf pdf_icon

TPCP8901

TPCP8902 TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) TPCP8902 Portable Equipment Applications Unit: mmSwitching Applications 0.330.05 0.05 M A8 5 Small footprint due to small and thin package High DC current gain : PNP hFE = 200 to 500 (IC = -0.2 A) : NPN hFE = 200 to 500 (IC = 0.2 A) 0.475 1 4B0.05 M B Low collector-emitter satura

Otros transistores... TPCP8507 , TPCP8510 , TPCP8511 , TPCP8601 , TPCP8602 , TPCP8603 , TPCP8604 , TPCP8701 , B647 , TPCP8H01 , TPCP8H02 , TTA0001 , TTA0002 , TTA003 , TTA004B , TTA007 , TTA1943 .

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