TTA004B Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TTA004B
Código: A004B
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 17 pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta: TO126N
Búsqueda de reemplazo de TTA004B
TTA004B datasheet
tta004b.pdf
TTA004B Bipolar Transistors Silicon PNP Epitaxial Type TTA004B TTA004B TTA004B TTA004B 1. Applications 1. Applications 1. Applications 1. Applications Audio-Frequency Amplifiers 2. Features 2. Features 2. Features 2. Features (1) High collector voltage VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance Cob = 17 pF (typ.) (4) High tran... See More ⇒
tta009.pdf
TTA009 Bipolar Transistors Silicon PNP Epitaxial Type TTA009 TTA009 TTA009 TTA009 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) Low collector saturation voltage VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching tstg = 300 ns (typ.) (IC = -1... See More ⇒
tta008b.pdf
TTA008B Bipolar Transistors Silicon PNP Epitaxial Type TTA008B TTA008B TTA008B TTA008B 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) High DC current gain hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage VCE(sat) = -0.5 V (max) (IC = -1A) ... See More ⇒
tta003.pdf
TTA003 Bipolar Transistors Silicon PNP Epitaxial Type TTA003 TTA003 TTA003 TTA003 1. Applications 1. Applications 1. Applications 1. Applications Power Amplifiers Power Switching 2. Features 2. Features 2. Features 2. Features (1) Low collector saturation voltage VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching tstg = 300 ns (typ.) 3. Packa... See More ⇒
Otros transistores... TPCP8604 , TPCP8701 , TPCP8901 , TPCP8H01 , TPCP8H02 , TTA0001 , TTA0002 , TTA003 , BD136 , TTA007 , TTA1943 , TTC0001 , TTC0002 , TTC003 , TTC004 , TTC005 , TTC007 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n2219 | tip42c | 2sc2240 | bc547 transistor equivalent | 2sa1943 | tip41c datasheet | mje15032 | tip32c datasheet










