TTA007
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TTA007
Código: WH
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.7
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 8
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TSM
Búsqueda de reemplazo de transistor bipolar TTA007
TTA007
Datasheet (PDF)
..1. Size:198K toshiba
tta007.pdf 
TTA007 TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 Unit: mmHigh-Speed Switching Applications DC-DC Converter Applications High DC current gain : hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage : VCE(sat) = -0.2 V (max) High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Uni
9.1. Size:183K toshiba
tta004b.pdf
TTA004BBipolar Transistors Silicon PNP Epitaxial TypeTTA004BTTA004BTTA004BTTA004B1. Applications1. Applications1. Applications1. Applications Audio-Frequency Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = -160 V (min)(2) Complementary to TTC004B(3) Small collector output capacitance: Cob = 17 pF (typ.)(4) High tran
9.2. Size:219K toshiba
tta009.pdf
TTA009Bipolar Transistors Silicon PNP Epitaxial TypeTTA009TTA009TTA009TTA0091. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA)(2) High-speed switching : tstg = 300 ns (typ.) (IC = -1
9.3. Size:313K toshiba
tta008b.pdf
TTA008BBipolar Transistors Silicon PNP Epitaxial TypeTTA008BTTA008BTTA008BTTA008B1. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A)(2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A)
9.4. Size:178K toshiba
tta003.pdf
TTA003Bipolar Transistors Silicon PNP Epitaxial TypeTTA003TTA003TTA003TTA0031. Applications1. Applications1. Applications1. Applications Power Amplifiers Power Switching2. Features2. Features2. Features2. Features(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA)(2) High-speed switching: tstg = 300 ns (typ.) 3. Packa
9.5. Size:602K toshiba
tta006b.pdf
TTA006B PNPTTA006BTTA006BTTA006BTTA006B1. 1. 1. 1. 2. 2. 2. 2. (1) : VCEO = -230 V ()(2) : Cob = 30 pF ()(3)
9.6. Size:172K toshiba
tta005.pdf
TTA005Bipolar Transistors Silicon PNP Epitaxial TypeTTA005TTA005TTA005TTA0051. Applications1. Applications1. Applications1. Applications High-Speed Switching DC-DC Converters2. Features2. Features2. Features2. Features(1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A)(2) Low collector saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -
9.7. Size:187K toshiba
tta0002.pdf
TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min) Complementary to TTC0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 V
9.8. Size:160K toshiba
tta0001.pdf
TTA0001 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0001 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 160 V (min.) Complementary to TTC0001 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -160 V
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