MT3S15TU Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MT3S15TU
Código: T3
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 12 V
Tensión colector-emisor (Vce): 6 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.08 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 11500 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: UFM
Búsqueda de reemplazo de MT3S15TU
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MT3S15TU datasheet
..1. Size:170K toshiba
mt3s15tu.pdf 
MT3S15TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S15TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=1.6 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=13.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE 2. EMITTER T 3 3. COLLECTOR UFM 1 2 JEDEC JEITA TOSHIBA 2-2U
9.1. Size:171K toshiba
mt3s19.pdf
MT3S19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=1.5 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) Marking 3 1. Base 2. Emitter T 6 3. Collector 1 2 S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Absolute Maximum Ratings (T
9.2. Size:161K toshiba
mt3s111 .pdf
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.9 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) T
9.3. Size:201K toshiba
mt3s113.pdf
MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C)
9.4. Size:156K toshiba
mt3s111tu .pdf
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA - Ab
9.5. Size:161K toshiba
mt3s19r.pdf
MT3S19R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm +0.08 0.42 +0.08 -0.05 0.17 0.05 M A -0.07 FEATURES 3 Low Noise Figure NF=1.5dB(Typ.) (@ f=1GHz) High Gain S21e 2=13dB(Typ.) (@ f=1GHz) 1 2 0.95 0.95 2.9 0.2 A Marking 3 T 6 1. Base 2. Emitter 3. Collector
9.6. Size:186K toshiba
mt3s16u.pdf
MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit mm UHF Band Oscillator and Amplifier Applications fT is high and current dependability is excellent. The characteristic of Reverse transfer capacitance (Cre) is flat. NF = 2.4dB(Typ.) (@ 2V, 5mA, 1 GHz) S21e 2 = 4.5dB(Typ.) (@ 2V, 10mA, 1 GHz) Marking 3 Type Name T 4 1.Base 2.E
9.7. Size:119K toshiba
mt3s106fs.pdf
MT3S106FS TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type MT3S106FS VCO Oscilletor Stage Unit mm VHF-UHF Low Noise Amplifier Application 1.0 0.05 0.8 0.05 Features Low Noise Figure NF=1.2dB (@f=2GHz) High Gain S21e 2=10dB (@f=2GHz) 1 3 2 0.1 0.05 0.1 0.05 Marking 2 3 4 1 1 Absolute Maximum Ratings (Ta = 25 C) 1.BASE Character
9.8. Size:162K toshiba
mt3s19tu.pdf
MT3S19TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19TU VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF = 1.5 dB (typ.) (@ f = 1 GHz) 1 High Gain S21e 2=13 dB (typ.) (@ f = 1 GHz) 3 2 Marking 3 1.BASE T 6 2.EMITTER 3.COLLECTOR 1 2 UFM JEDEC - JEITA - TOSHIBA 2-2U1B Abs
9.10. Size:161K toshiba
mt3s111p.pdf
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.95 dB (typ.) (@f=1 GHz) High Gain S21e 2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g (typ.
9.11. Size:273K toshiba
mt3s111tu.pdf
MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit mm 2.1 0.1 1.7 0.1 Features Low-Noise Figure NF=0.85 dB (typ.) (@ f=1 GHz) 1 High Gain S21e 2=12.5 dB (typ.) (@ f=1 GHz) 3 2 Marking 3 1. BASE R 5 2. EMITTER 3. COLLECTOR 1 2 UFM JEDEC - JEITA -
9.12. Size:203K toshiba
mt3s113 .pdf
MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) High Gain S21e 2=11.8dB(Typ.) (@ f=1GHz) Marking R 7 1. Base 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C)
9.13. Size:159K toshiba
mt3s111.pdf
MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.9 dB (typ.) (@ f=1 GHz) High Gain S21e 2=12 dB (typ.) (@ f=1 GHz) Marking 1. Base R 5 2. Emitter 3. Collector S-Mini JEDEC TO-236 JEITA SC-59 Absolute Maximum Ratings (Ta = 25 C) T
9.14. Size:197K toshiba
mt3s113p.pdf
MT3S113P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm FEATURES Low Noise Figure NF = 1.15dB (typ.) (@ f=1GHz) High Gain S21e 2 = 10.5dB (typ.) (@ f=1GHz) Marking R 7 Pw-Mini JEDEC - JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g
9.15. Size:176K toshiba
mt3s113tu.pdf
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain S21e 2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base 2. 2. Emitter R 7 3. 3
9.16. Size:163K toshiba
mt3s111p .pdf
MT3S111P TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111P VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit mm Features Low-Noise Figure NF=0.95 dB (typ.) (@f=1 GHz) High Gain S21e 2=10.5 dB (typ.) (@f=1 GHz) Marking R 5 PW-Mini JEDEC JEITA SC-62 Absolute Maximum Ratings (Ta = 25 C) TOSHIBA 2-5K1A Weight 0.05 g (typ.
9.17. Size:178K toshiba
mt3s113tu .pdf
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit mm 2.1 0.1 1.7 0.1 FEATURES Low Noise Figure NF=1.15dB(Typ.) (@ f=1GHz) 1 High Gain S21e 2=12.5dB(Typ.) (@ f=1GHz) 2 3 Marking 3 1. 1. Base 2. 2. Emitter R 7 3. 3
Otros transistores... 2SC5317FT
, 2SC5319
, MT3S03AU
, MT3S04AU
, MT3S07FS
, MT3S07T
, MT3S07U
, MT3S11FS
, 2SC2073
, MT3S16U
, MT3S19
, MT3S19R
, MT3S19TU
, MT3S20P
, MT3S20R
, MT3S20TU
, MT3S21P
.
History: 2SD363
| MP2062
