MT3S20TU
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MT3S20TU
Código: MU
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 12
V
Tensión emisor-base (Veb): 1.5
V
Corriente del colector DC máxima (Ic): 0.08
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7000
MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
UFM
Búsqueda de reemplazo de transistor bipolar MT3S20TU
MT3S20TU
Datasheet (PDF)
..1. Size:188K toshiba
mt3s20tu.pdf 
MT3S20TU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm2.10.11.70.1FEATURES Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz) 1 High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 3 2 Marking 3 1.BASE M U 2.EMITTER 3.COLLECTOR UFM 1 2 JEDEC -JEITA -TOSHIBA 2-2U1BAbsolu
8.1. Size:178K toshiba
mt3s20p.pdf
MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure: NF=1.45dB(Typ.) (@f=1GHz) High Gain: |S21e|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characteristi
8.2. Size:182K toshiba
mt3s20r.pdf
MT3S20R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm +0.080.42+0.08-0.050.170.05M A -0.07FEATURES 3 Low Noise Figure:NF=1.45dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=12dB(Typ.) (@ f=1GHz) 120.95 0.952.90.2A Marking 3 1. Base2. Emitter3. Collec
9.1. Size:169K toshiba
mt3s21p.pdf
MT3S21P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S21P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mmFEATURES Low-Noise Figure: NF=1.55 dB (typ.) (@f=1 GHz) High Gain: |S21e|2=11 dB (typ.) (@f=1 GHz) Marking T 2 PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characterist
9.2. Size:189K toshiba
mt3s22p.pdf
MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mmFEATURES Low Noise Figure: NF=1.5dB(Typ.) (@f=1GHz) High Gain: |S21e|2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini JEDEC -JEITA SC-62TOSHIBA 2-5K1AAbsolute Maximum Ratings (Ta = 25C) Weight: 0.05 g (Typ.) Characterist
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
