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2SB1667SM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1667SM
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 9 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO220SM

 Búsqueda de reemplazo de transistor bipolar 2SB1667SM

 

2SB1667SM Datasheet (PDF)

 7.1. Size:159K  toshiba
2sb1667.pdf

2SB1667SM
2SB1667SM

 7.2. Size:1322K  kexin
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SMD Type TransistorsPNP Transistors2SB1667TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low saturation voltage Audio Frequency Power Amplifier Applications0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Uni

 8.1. Size:253K  renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:253K  renesas
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2SB1667SM
2SB1667SM

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:138K  nec
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2SB1667SM
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DATA SHEETSILICON POWER TRANSISTOR2SB1669PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SB1669 is a power transistor that can be directly driven from ORDERING INFORMATIONthe output of an IC. This transistor is ideal for OA and FA equipmentPart No. Packagesuch as motor and solenoid drivers.2SB1669 TO-220AB2SB1669-S TO-262FEATURES2SB1669-Z TO-220SMD High

 8.4. Size:52K  rohm
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2SB1668TransistorsPower Transistor (-100V, -8A)2SB1668 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.10.0 4.52) Built-in resistor between base and emitter.3.2 2.8 3) Built-in damper diode.4) Complements the 2SD2607.1.21.30.8( )(1) Base Gate0.752.54 2.54 2.6 Absolute maximum ratings (Ta = 25C)(1) (2) (3)

 8.5. Size:212K  inchange semiconductor
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isc Silicon PNP Power Transistor 2SB1669DESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as motor and solenoid drivers

 8.6. Size:210K  inchange semiconductor
2sb1669-z.pdf

2SB1667SM
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isc Silicon PNP Power Transistor 2SB1669-ZDESCRIPTIONHigh DC current amplifier rateh 100@VCE=-5V,IC=-0.5AFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SB1669-Z is a power transistor that can be directly drivenfrom the output of an IC.This transistor is ideal for OA and FAequipment such as

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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