2SD1412A. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SD1412A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1412A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 70 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Capacitancia de salida (Cc): 250 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO220NIS

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2SD1412A datasheet

..1. Size:216K toshiba
2sd1412a.pdf pdf_icon

7.1. Size:184K toshiba
2sd1412.pdf pdf_icon

7.2. Size:215K inchange semiconductor
2sd1412.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1412 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Complement to Type 2SB1019 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications.

8.1. Size:183K toshiba
2sd1410a.pdf pdf_icon

8.2. Size:183K toshiba
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8.3. Size:163K toshiba
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8.4. Size:184K toshiba
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8.5. Size:216K toshiba
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8.6. Size:213K toshiba
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8.7. Size:38K toshiba
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8.8. Size:112K renesas
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.9. Size:112K renesas
rej03g0787 2sd1418ds-1.pdf pdf_icon

8.10. Size:31K hitachi
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2SD1418 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1025 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5V Collector

8.11. Size:25K hitachi
2sd1419.pdf pdf_icon

2SD1419 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1026 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1419 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5V Collecto

8.12. Size:905K kexin
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SMD Type Transistors NPN Transistors 2SD1418 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SB1025 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collector Current - Continu

8.13. Size:900K kexin
2sd1419.pdf pdf_icon

SMD Type Transistors NPN Transistors 2SD1419 1.70 0.1 Features Low frequency power amplifier Complementary to 2SB1026 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 5 Collector Current - Conti

8.14. Size:212K inchange semiconductor
2sd1413.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1413 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1A, V = 2V FE C CE Complement to Type 2SB1023 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI

8.15. Size:218K inchange semiconductor
2sd1414.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1414 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 1A, V = 2V FE C CE Complement to Type 2SB1024 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI

8.16. Size:214K inchange semiconductor
2sd1415.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1415 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB1020 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL

8.17. Size:212K inchange semiconductor
2sd1410.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applicati

8.18. Size:215K inchange semiconductor
2sd1411.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1411 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Complement to Type 2SB1018 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications.

8.19. Size:209K inchange semiconductor
2sd1415a.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1415A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switch

8.20. Size:213K inchange semiconductor
2sd1416.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1416 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 3V FE C CE Complement to Type 2SB1021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI

8.21. Size:212K inchange semiconductor
2sd1417.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD1417 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 3A) FE CE C Low Collector Saturation Voltage Complement to Type 2SB1022 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier and switchin

Otros transistores... 2SB1641 , 2SB1642 , 2SB1667SM , 2SB1682 , 2SD1407A , 2SD1409A , 2SD1410A , 2SD1411A , D209L , 2SD1415A , 2SD2075A , 2SD2206A , 2SD2406 , 2SD2414SM , 2SD2440 , 2SD2449 , 2SD2461 .