2SD2536 Todos los transistores

 ..1. Size:71K  toshiba
 2sd2536.pdf

2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2536 Switching Applications Unit mm Micro Motor Drive, Hammer Drive Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.2 V (max) CE (sat) (I = 0.7 A, V = 4.2 V) C BH Zener diode included between collector and base. Max

 8.1. Size:276K  toshiba
 2sd2539.pdf

2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

 8.2. Size:178K  toshiba
 2sd2531.pdf

 8.3. Size:1218K  rohm
 2sd2537.pdf

2SD2537 Middle Power Transistor (25V / 1.2A) Datasheet lOutline l SOT-89 Parameter Value SC-62 VCEO 25V IC 1.2A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage, Max. VCE(sat)=300mV at IC/IB=500mA/10mA. 2)High emitter-base voltage. (VEBO=12V) 3)PD=2W (Mounted on a ceramic board (40 40 0.7mm) ). lApplication l

 8.4. Size:45K  panasonic
 2sd2530.pdf

Power Transistors 2SD2530 Silicon NPN triple diffusion planer type Darlington Unit mm For power amplification 10.0 0.2 5.0 0.1 1.0 0.2 Features High forward current transfer ratio hFE Allowing supply with the radial taping 1.2 0.1 C 1.0 Low collector to emitter saturation voltage VCE(sat)

 8.5. Size:45K  panasonic
 2sd2538.pdf

Power Transistors 2SD2538 Silicon NPN triple diffusion planer type Darlington Unit mm For power amplification 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.4 0.2 2.6 0.1 1.6 0.2 Absolute Maximum Ratings TC = 25 C 0.8 0.1 0.55 0.15 Parameter Symbol

 8.6. Size:451K  blue-rocket-elect
 2sd2531.pdf

 8.7. Size:1066K  kexin
 2sd2537.pdf

SMD Type Transistors NPN Transistors 2SD2537 1.70 0.1 Features High DC current gain. High emitter-base voltage. Low saturation voltage. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 9 Col

 8.8. Size:214K  inchange semiconductor
 2sd2539.pdf

isc Silicon NPN Power Transistor 2SD2539 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

 8.9. Size:208K  inchange semiconductor
 2sd2531.pdf

isc Silicon NPN Power Transistor 2SD2531 DESCRIPTION Low Collector Saturation Voltage- V = 1.0 (Max)@ I = 2.5A CE(sat) C High Power Dissipation- P = 25W@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT