2SD2686 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2686
Código: 3H
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta: PW-MINI
Búsqueda de reemplazo de transistor bipolar 2SD2686
2SD2686 Datasheet (PDF)
2sd2686.pdf
2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2686 Solenoid Drive Applications Unit: mmMotor Drive Applications High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 50 VCollector-em
2sd2689ls.pdf
Ordering number : ENN75272SD2689LSNPN Triple Diffused Planar Silicon Transistor2SD2689LSColor TV Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process).[2SD2689LS] Adoption of MBIT process.10.0 4.53.22.80.91.2 1.20.75 0.71 : Base
2sd2688.pdf
Ordering number : ENN75262SD2688LSNPN Triple Diffused Planar Silicon Transistor2SD2688LSColor TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2079D High reliability(Adoption of HVP process).[2SD2688LS] Adoption of MBIT process.10.0 4.53.22.8 On-chip damper diode.0.9
2sd2687s.pdf
2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S Dimensions (Unit : mm) Application Low frequency amplifier Storobo Features 1) A collector current is large. 2) VCE(sat) 250mV At lc=1.5A / lB=30mA (1)Emitter(GND)(2)Collector(OUT)(3)Base(IN) Taping specifications Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base
2sd2689.pdf
isc Silicon NPN Power Transistor 2SD2689DESCRIPTIONHigh speed.High breakdown voltage(VCBO=1500V).High reliability(Adoption of HVP process).Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV Horizontal DeflectionOutput Applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
