2SD2695 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2695
Código: D2695
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hFE): 2000
Encapsulados: LSTM
Búsqueda de reemplazo de 2SD2695
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2SD2695 datasheet
2sd2695.pdf
2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2695 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) Zener diode included between collector
2sd2696.pdf
2SD2696 Datasheet Low frequency transistor (for amplification) lOutline l Parameter Value VMT3 VCEO 30V IC 400mA SOT-723 SC-105AA lFeatures l 1)The transistor of 400mA class which went only lInner circuit l with 2012 size conventionally is attained in 1208 size. 2)Collector saturation voltage is low
2sd2636.pdf
2SD2636 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2636 Power Amplifier Applications Unit mm High-Power Switching Applications High-breakdown voltage VCEO = 160 V (min) Complementary to 2SB1682 Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitter voltage
2sd2686.pdf
2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2686 Solenoid Drive Applications Unit mm Motor Drive Applications High DC current gain hFE = 2000 (min) (VCE = 2 A, IC = 1 A) Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-em
2sd2638.pdf
2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. Unit mm High Speed Switching Applications. High voltage VCBO = 1700 V Low saturation voltage V = 5 V (max) CE (sat) High speed t = 0.8 s (max) f Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector
2sd2689ls.pdf
Ordering number ENN7527 2SD2689LS NPN Triple Diffused Planar Silicon Transistor 2SD2689LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2689LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base
2sd2649.pdf
Ordering number ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2649] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas
2sd2627.pdf
Ordering number ENN6478 2SD2627 NPN Triple Diffused Planar Silicon Transistor 2SD2627 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079C High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0
2sd2646.pdf
Ordering number ENN6922 2SD2646 NPN Triple Diffused Planar Silicon Transistor 2SD2646 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2646] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas
2sd2688.pdf
Ordering number ENN7526 2SD2688LS NPN Triple Diffused Planar Silicon Transistor 2SD2688LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2688LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9
2sb1683 2sd2639 2sd2639.pdf
Ordering number ENN6960 2SB1683 / 2SD2639 2SB1683 PNP Epitaxial Planar Silicon Transistor 2SD2639 NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features Package Dimensions Wide ASO because of on-chip ballast resistance. unit mm Good dependence of fT on current and good HF 2010C characteristic. [2SB1683 / 2SD26
2sd2663.pdf
Ordering number ENN7380 2SB1700 / 2SD2663 PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1700 / 2SD2663 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2042B [2SB1700 / 2SD2663] 8.0 Features 4.0 3.3 1.0 1.0 High DC current gain. Large current capacity and wide
2sd2645.pdf
Ordering number ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2645] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.
2sd2624.pdf
Ordering number ENN6500A 2SD2624 NPN Triple Diffused Planar Silicon Transistor 2SD2624 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2624] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.
2sd2629.pdf
Ordering number ENN6352 NPN Triple Diffused Planar Silicon Transistor 2SD2629 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079C High reliability (Adoption of HVP process). [2SD2629] Adoption of MBIT process. 4.5 10.0 2.8 On-chip damper diode. 3.2 0.9 1.2 0.7 0.75
2sd2634.pdf
Ordering number ENN6474B 2SD2634 NPN Triple Diffused Planar Silicon Transistor 2SD2634 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2634] Adoption of MBIT process. 5.6 3.4 On-chip damper diode. 16.0 3.1 2.8 2.0
2sd2627ls.pdf
Ordering number ENN6478A 2SD2627LS NPN Triple Diffused Planar Silicon Transistor 2SD2627LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2079D High reliability(Adoption of HVP process). [2SD2627] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0.9 1.
2sd2635.pdf
Ordering number ENN6449 NPN Epitaxial Planar Silicon Darlington Transistor 2SD2635 120V / 2A Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, and relay drivers. unit mm 2064A Features [2SD2635] 2.5 Darlington connection 1.45 High DC current gain. 6.9 1.0 DC current gain is less affected by temperature. 0.6 0.9 0.5 1 2 3 0.45 1
2sd2650.pdf
Ordering number ENN6781A 2SD2650 NPN Triple Diffused Planar Silicon Transistor 2SD2650 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2650] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Ba
2sd2658ls.pdf
Ordering number ENN7168 2SD2658LS NPN Triple Diffused Planar Silicon Transistor 2SD2658LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079D High reliability (Adoption of HVP process). [2SD2658LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0
2sd2648.pdf
Ordering number ENN6923 2SD2648 NPN Triple Diffused Planar Silicon Transistor 2SD2648 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2648] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas
r07ds0281ej 2sd2655-1.pdf
Preliminary Datasheet 2SD2655 R07DS0281EJ0300 (Previous REJ03G0810-0200) Silicon NPN Epitaxial Planer Rev.3.00 Low Frequency Power Amplifier Mar 28, 2011 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation PC = 800 mW
2sd2653.pdf
2SD2653 Transistors Low frequency amplifier 2SD2653 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. 2) VCE(sat) 180mV ( ) ( ) 1 2 0.95 0.95 at IC = 1A / IB = 50mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute m
2sd2652.pdf
2SD2652 Transistors General purpose amplification (12V, 1.5A) 2SD2652 External dimensions (Units mm) Application Low frequency amplifier Features 1.25 1) A collector current is large. 2.1 2) Collector saturation voltage is low. VCE(sat) 200mV 0.1Min. At IC = 500mA / IB = 25mA Each lead has same dimensions ROHM UMT3 (1) Emitter Abbreviated symbol EW EIAJ SC-70 (2
2sd2656fra.pdf
2SD2656 2SD2656FRA Datasheet NPN 1A 30V Low Frequency Amplifier Transistors AEC-Q101 Qualified lOutline UMT3 Parameter Value Collector VCEO 30V Base IC 1A Emitter 2SD2656FRA 2SD2656 SOT-323 (SC-70) lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low. VCE(sat) is Max. 350mV At IC=500mA, IB=25mA 3) Complementary PNP Types 2S
2sd2653k.pdf
2SD2653K Transistors Low frequency amplifier 2SD2653K External dimensions (Units mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 180mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions Abbreviated symbol FW (1) Emitter ROHM SMT3 EIAJ SC-59 (2) Base JEDEC SOT-346 (3) Collector Absolute m
2sd2687s.pdf
2SD2687S Transistors Low frequency amplifier, strobe 2SD2687S Dimensions (Unit mm) Application Low frequency amplifier Storobo Features 1) A collector current is large. 2) VCE(sat) 250mV At lc=1.5A / lB=30mA (1)Emitter(GND) (2)Collector(OUT) (3)Base(IN) Taping specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base
2sd2656.pdf
2SD2656 Transistors General purpose amplification (30V, 1A) 2SD2656 Application Low frequency amplifier 1.25 Features 2.1 1) A collector current is large. 2) Collector saturation voltage is low. 0.1Min. VCE(sat) 350mV Each lead has same dimensions At IC = 500mA / IB = 25mA ROHM UMT3 (1) Emitter Abbreviated symbol EU EIAJ SC-70 (2) Base JEDEC SOT-323 (
2sd2614.pdf
2SD2614 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 5A) 2SD2614 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to 10.0 4.5 "L" loads. 3.2 2.8 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 1.2 1.3 0.8 0.75 ( ) 2.54 2.54 2.6 (1)
2sd2657k-1.pdf
2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 350mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions ROHM SMT3 Abbreviated symbol FZ (1) Emitter EIAJ SC-59 (2) Base JEDEC SOT-346 (3) Collector
2sd2607.pdf
2SD2607 Transistors Power Transistor (100V, 8A) 2SD2607 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 10.0 4.5 3.2 2.8 3) Built-in damper diode. 4) Complements the 2SB1668. 1.2 1.3 0.8 0.75 2.54 2.54 2.6 Absolute maximum ratings (Ta = 25 C) (1) (2) (3) ( ) (1) (2) (3) (1) B
2sd2662.pdf
2SD2662 Transistors Low frequency amplifier 2SD2662 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA (1)Base ROHM MPT3 JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Abbreviated symbol FZ Packaging specifications Absolute maximum ratings (Ta=25
2sd2611.pdf
2SD2611 Transistors Power Transistor (80V, 7A) 2SD2611 Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25 C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672. Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collecto
2sd2670.pdf
2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) max.250mV 0.95 0.95 0.16 At lc=1.5A / lB=30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Abso
2sd2671.pdf
2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. 2) VCE(sat) max. 370mV (1) (2) 0.95 0.95 At lc=1.5A / lB=75mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute maxi
2sd2661.pdf
2SD2661 Transistors Low frequency amplifier transistor(12V, 2A) 2SD2661 External dimensions (Unit mm) Features Low VCE(sat) 180mV 4.0 (IC / IB = 1A / 50mA) 1.0 2.5 0.5 (1) (2) (3) (1)Base ROHM MPT3 JEITA SC-62 (2)Collector JEDEC SOT-89 (3)Emitter Abbreviated symbol FW Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Li
2sd2678.pdf
2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XX NPN epitaxial planar silicon transistor
2sd2618.pdf
2SD2618 Transistors Power Transistor (80V, 4A) 2SD2618 Features Circuit diagram 1) Darlington connection for a high hFE. C 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. B R 300 R B Base C Collector E E Emitter Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V C
2sd2675.pdf
2SD2675 Transistors General purpose amplification (30V, 1A) 2SD2675 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 1.0MAX 2.9 0.85 Features 0.7 0.4 (3) 1) A collector current is large. 2) Collector saturation voltage is low. 1 2 VCE(sat) max.350mV ( ) ( ) 0.95 0.95 0.16 At IC = 500mA / IB = 25mA 1.9 (1) Base (2) Emitter Each lead
2sd2657.pdf
2SD2657 Transistors Low frequency amplifier 2SD2657 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 1 2 2) VCE(sat) max.350mV ( ) ( ) 0.95 0.95 0.16 At IC = 1A / IB = 50mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging
2sd2654.pdf
2SD2654 Datasheet General purpose Transistor (50V, 150mA) lOutline l SOT-416 Parameter Value SC-75A VCEO 50V IC 150mA EMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA) lApplication l LOW FREQUENCY AMPLIFIER, DRIVER
2sd2615.pdf
2SD2615 Transistors Power Transistor (120V, 6A) 2SD2615 Features Circuit diagram 1) Darlington connection for high DC current gain. C 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. B R1 R2 E R1 5.0k B Base C Collector R2 300 E Emitter Absolute maximum ratings (Ta = 25 C) Parameter Symbol Limits Unit Collector
2sd2672.pdf
2SD2672 Transistors Low frequency amplifier 2SD2672 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.7 0.4 ( ) 3 Features 1) A collector current is large. (4A) 2) VCE(sat) 250mV ( ) ( ) 1 2 0.95 0.95 At IC = 2A / IB = 40mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Pac
2sd2673.pdf
2SD2673 Transistors Low frequency amplifier 2SD2673 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. (3A) ( ) ( ) 2) VCE(sat) max. 250mV 1 2 0.95 0.95 0.16 At IC = 1.5A / IB = 30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector P
2sd2657k.pdf
2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 350mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions ROHM SMT3 Abbreviated symbol FZ (1) Emitter EIAJ SC-59 (2) Base JEDEC SOT-346 (3) Collector
2sd2674.pdf
2SD2674 Datasheet General purpose amplification (12V, 1.5A) lOutline l SOT-346T Parameter Value SC-96 VCEO 12V IC 1.5A TSMT3 lFeatures lInner circuit l l 1)A collector current is large. 2)Collector saturation voltage is low. VCE(sat) 200mV at IC=500mA/IB=25mA lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificat
2sd2616.pdf
2SD2616 Transisitors Power Transistor (100V, 5A) 2SD2616 Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25 C) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V 5 A(DC) C
2sd2679.pdf
2SD2679 Transistors 2A / 30V Bipolar transistor 2SD2679 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 350mV at IC = 1.5A, IB = 75mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XZ NPN epitaxial planar silicon transistor
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base
2sd2620.pdf
Transistors 2SD2620J Silicon NPN epitaxial planer type Unit mm For low-frequency amplification 1.60+0.05 0.03 0.12+0.03 0.01 1.00 0.05 3 Features High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) 1 2 High emitter to base voltage VBEO 0.27 0.02 (0.50)(0.50) SS-mini type package Absolute Maximum Ratings Ta = 2
2sd2623.pdf
Transistors 2SD2623 Silicon NPN epitaxial planar type For low-frequency amplification Unit mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 Low ON resistance Ron S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1 2 (0.65) (0.65) Absolute Maximum Ratings Ta = 25 C 1.3 0.1 Parameter Symbol Rating Unit 2
2sd2659.pdf
Power Transistors 2SD2659 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For power switching 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE TO-220D built-in Excellent package with withstand voltage 5 kV guaranteed 1.4 0.2 2.6 0.1 1.6 0.2 0.8 0.1 0.55 0.1
2sd2621.pdf
Transistors 2SD2621 Silicon NPN epitaxial planar type For low-frequency driver amplification Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 3 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage (Collector open) VEBO 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.05 Absolute Maximum Ratings Ta
2sd2651.pdf
2SD2651 Silicon NPN Epitaxial High Voltage Amplifier ADE-208-976 (Z) 1st. Edition October 2000 Features High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2651 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltag
2sd2655.pdf
2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ADE-208-1388A (Z) Rev.1 Jun. 2001 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Comple
2sd2633.pdf
Power Transistor 2SD2633 Absolute Maximum Ratings Electrical Characteristics External Dimensions TO220F (full-mold) (Ta=25 C) (Ta=25 C) Symbol Ratings Unit Symbol Test Conditions Ratings Unit 4.2 I A V 200 V CBO V =200V 100max CBO CB 10.0 3.3 2.8 C0.5 V 150 V I V =6V 10max mA CEO EBO EB I =50mA V 6 V V C 150min V EBO CEO I 8 A h V =2V, I =6A 2000min C FE CE C I 1 A V I =6
2sd2643.pdf
C Equivalent circuit B Darlington 2SD2643 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application Audio, Series Regulator and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO
2sd2642.pdf
C Equivalent circuit B Darlington 2SD2642 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 110 ICB
2sd2641.pdf
Equivalent circuit C B Darlington 2SD2641 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Ratings Symbol Ratings Symbol Conditions Unit Unit 0.2 4.8 0.4 15.6 100max A VCB
2sd2625z9 br3dd2625z9p.pdf
2SD2625Z9(BR3DD2625Z9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
2sd2603.pdf
2SD2603(BR3DD2603F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High VCEO, low VCE(sat). / Applications Power out amplifier applications. / Equivalent Circuit
2sd2625v9 br3dd2625v9p.pdf
2SD2625V9(BR3DD2625V9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
2sd2625x9 br3dd2625x9p.pdf
2SD2625X9(BR3DD2625X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit /
2sd2633.pdf
isc Silicon NPN Darlington Power Transistor 2SD2633 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = 6A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V =1.5V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pur
2sd2642.pdf
isc Silicon NPN Darlington Power Transistor 2SD2642 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1687 Minimum Lot-to-Lot variations for robust device performance and reliable op
2sd2645.pdf
isc Silicon NPN Power Transistor 2SD2645 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sd2634.pdf
isc Silicon NPN Power Transistor 2SD2634 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sd2689.pdf
isc Silicon NPN Power Transistor 2SD2689 DESCRIPTION High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Color TV Horizontal Deflection Output Applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co
Otros transistores... 2SD2525 , 2SD2526 , 2SD2531 , 2SD2536 , 2SD2584 , 2SD2604 , 2SD2636 , 2SD2686 , 431 , 2SD2719 , TPCP8L01 , TTB001 , TTB002 , 2SA673AKC , 2SA673AKD , 2SC1213AKC , 2SC1213AKD .
History: 2N5532
History: 2N5532
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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