2SA1179N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SA1179N
   Código: M
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 180 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: CPA

Búsqueda de reemplazo de transistor bipolar 2SA1179N

2SA1179N Datasheet (PDF)

..1. Size:35K sanyo
2sa1179n 2sc2812n.pdf

Ordering number : EN7198A2SA1179N / 2SC2812NSANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsLow-Frequency General-Purpose2SA1179N / 2SC2812NAmp ApplicationsFeatures Miniature package facilitates miniaturization in end products. High breakdown voltage.Specifications ( ) : 2SA1179NAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

..2. Size:41K sanyo
2sa1179 2sa1179n.pdf

No. N71982SA1179N / 2SC2812NNo. N719872602PNP / NPN 2SA1179N / 2SC2812N 2SA1179N Absolu

7.1. Size:179K secos
2sa1179.pdf

2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High breakdown voltage AL33Top View C B11 2MARKING 2K EProduct Marking Code D2SA1179 MH JF GMillimeter MillimeterPACKAGE INFORMATION REF. REF.Min. Max. Min. Ma

7.2. Size:620K jiangsu
2sa1179.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 2SA1179 TRANSISTOR (PNP)3FEATURES 1 . High breakdown voltage 1. BASE 22. EMITTER MARKING: M 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base

7.3. Size:360K htsemi
2sa1179.pdf

2SA1 1 7 9 TRANSISTOR(PNP) SOT-23 FEATURES . High breakdown voltage 1. BASE 2. EMITTER MARKING: M 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -150 mA Pc Collector Power Dissipation 20

7.4. Size:285K lge
2sa1179 sot-23.pdf

2SA1179 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -55 VVCEO Collector-Emitter Voltage -50 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -

7.5. Size:409K kexin
2sa1179.pdf

SMD Type orSMD Type TransistICsPNP Transistors2SA1179SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesHigh breakdown voltage1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -55 VCollector-emitter voltage VCEO -50 VEmitter-base voltage VEBO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SA1206

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050