2SA2186
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA2186
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 420
MHz
Capacitancia de salida (Cc): 16
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
NMP
Búsqueda de reemplazo de transistor bipolar 2SA2186
2SA2186
Datasheet (PDF)
..1. Size:32K sanyo
2sa2186.pdf 
Ordering number : ENA02692SA2186PNP Epitaxial Planar Silicon Transistor2SA2186High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT processes. High current capacity. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Rat
0.1. Size:526K onsemi
2sa2186-an.pdf
Ordering number : ENA0269A2SA2186Bipolar Transistorhttp://onsemi.com-50V, -2A, Low VCE(sat), PNP Single NMPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at
8.1. Size:206K toshiba
2sa2184.pdf
2SA2184 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2184 High Voltage Switching Applications Unit: mm High voltage: VCEO = -550 V High speed: tf = 40 ns (typ.) (IC = -0.5A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -550 VCollector-emitter voltage VCEO -550 VEmitter-base voltage VEBO -7 VDC IC -1
8.2. Size:179K toshiba
2sa2183.pdf
2SA2183 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2183 High Current Switching Applications Unit: mm Low collector-emitter saturation : VCE(sat) = -1.0 Vmax Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -60 VEmitter-base voltage VEBO -7 VDC IC -5.0 ACollector current
8.3. Size:166K toshiba
2sa2182.pdf
2SA2182 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2182 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High transition frequency: fT = 80 MHz (typ.) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO - 230 VCollector-emitter voltage VCEO - 230 VEmitter-base voltage VEBO - 5 VDC IC - 1.0 A
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
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, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
