2SA2205 Todos los transistores

Ordering number ENA0544 2SA2205 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2205 High-Voltage Switching Applications Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers. Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

Ordering number ENA0544A 2SA2205 Bipolar Transistor http //onsemi.com -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers Features Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Sp

Ordering number ENA0544A 2SA2205 Bipolar Transistor http //onsemi.com -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA Applications DC / DC converter, Relay drivers, lamp drivers, motor drivers Features Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Sp

2SA2206 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2206 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage V = -0.5 V (max) (I = -1A) CE (sat) C High-speed switching t = 300 ns (typ.) stg Complementary to 2SC6124 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base volt

Ordering number ENA0583 2SA2202 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2202 High-Voltage Switching Applications Applications DC / DC converters, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET, MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switc

Ordering number ENA0583A 2SA2202 Bipolar Transistor http //onsemi.com ( ) 100V, 2A, Low VCE sat PNP Single PCP Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET, MBIT processes Large current capacity Low collector to emitter saturation voltage High-speed switching High allowable power dis