2SC5646A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC5646A
Código: NF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 9
V
Tensión colector-emisor (Vce): 4
V
Tensión emisor-base (Veb): 2
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 12500
MHz
Capacitancia de salida (Cc): 0.55
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SSFP
Búsqueda de reemplazo de transistor bipolar 2SC5646A
2SC5646A
Datasheet (PDF)
..1. Size:55K sanyo
2sc5646a.pdf 
Ordering number : ENA1120 2SC5646ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier,2SC5646AOSC ApplicationsFeatures Low-noise : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V).: fT=12.5GHz typ (VCE=3V). Low-voltage operation. High gain : S21e2=9.5dB typ (f=2GHz). Ultrasmall
..2. Size:431K onsemi
2sc5646a.pdf
Ordering number : ENA1120A2SC5646ARF Transistorhttp://onsemi.com4V, 30mA, fT=12.5GHz, NPN Single SSFPFeatures Low-noise : NF=1.5dB typ (f=2GHz) High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation High gain 2 : S21e =9.5dB typ (f=2GHz) Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen
7.1. Size:31K sanyo
2sc5646.pdf
Ordering number : ENN66062SC5646NPN Epitaxial Planar Silicon Transistor2SC5646UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2159: fT=12.5GHz typ (VCE=3V).[2SC5646] Low operating voltage. High gain :S21e2=9.5dB typ (f=2GHz).
8.1. Size:36K sanyo
2sc5647.pdf
Ordering number : ENN73262SC5647NPN Epitaxial Planar Silicon Transistor2SC5647UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2106A: fT=11.5GHz typ (VCE=3V).[2SC5647] Low operating voltage.0.75 High gain : S21e2=10.5dB typ (f=2
8.2. Size:32K sanyo
2sc5645.pdf
Ordering number : ENN65882SC5645NPN Epitaxial Planar Silicon Transistor2SC5645UHF to S Band Low-Noise Amplifierand OSC ApplicationsFeatures Package Dimensions Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cutoff frequency : fT=10GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V).[2SC5645] Low-voltage operating . High gain :S21e2=9.5dB typ (f=2GHz). 0
8.3. Size:19K nec
2sc5649 ne856m23.pdf
PRELIMINARY DATA SHEETNPN SILICON TRANSISTOR NE856M23OUTLINE DIMENSIONS (Units in mm)FEATURESPACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance0.251 LOW NOISE FIGURE:NF = 1.4 dB at
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