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ECH8502 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ECH8502
   Material: Si
   Polaridad de transistor: PNP*NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 260 MHz
   Capacitancia de salida (Cc): 45 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: ECH8
 

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ECH8502 Datasheet (PDF)

 ..1. Size:441K  sanyo
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ECH8502

ECH8502Ordering number : ENA1758SANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon TransistorsECH8502Gate Drive ApplicationsFeatures Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE(sat)= --0.12V(typ.)@IC= --2.5A Halogen free complianc

 ..2. Size:406K  onsemi
ech8502.pdf pdf_icon

ECH8502

Ordering number : ENA1758AECH8502Bipolar Transistorhttp://onsemi.com() () ( )50V, 30A, Low VCE sat Complementary Dual ECH8Features Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE(sat)= --0.12V(typ.)@IC= --2.5A Halogen free compliance( ): PN

 8.1. Size:323K  sanyo
ech8503.pdf pdf_icon

ECH8502

ECH8503Ordering number : ENA1680SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorECH8503Motor Drive ApplicationsFeatures Composite type, facilitating high-density mounting Mounting height 0.9mm Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO

 8.2. Size:421K  sanyo
ech8501.pdf pdf_icon

ECH8502

ECH8501Ordering number : ENA1581SANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon TransistorsECH8501Gate Drive ApplicationsFeatures Composite type, facilitating high-density mounting Mounting height 0.9mm Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= --2.5A Halogen free complianc

Otros transistores... 2SC5646A , EC3H07BA , FH105A , MCH4013 , CPH5516 , CPH5518 , CPH5520 , CPH5541 , 2SB817 , MCH6536 , CPH6538 , CPH6539 , MCH6534 , SCH2202 , CPH5505 , ECH8503 , 2SD2560 .

History: 2SAR554P | 2N3231

 

 
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