2SC4445 Todos los transistores

JMnic Product Specification Silicon NPN Power Transistors 2SC4445 DESCRIPTION With TO-3PML package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Aabsolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDI

2SC4445 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose (Ta=25 C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Symbol Symbol 2SC4445 Unit Conditions 2SC4445 Unit 0.2 0.2 5.5 15.6 0.2 3.45 ICBO VCBO 900 V VCB=800V 100max

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4445 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applicatio

Ordering number EN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2059 Low saturation voltage. [2SA1685/2SC4443] B Base C Collector E Emitter ( ) 2SA1685 SANYO MCP Specifications Absolute Maximum Ratings at Ta = 25 C

Ordering number EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1687/ unit mm 2SC4446-applied sets to be made small and slim. 2059 High VEBO. [2SA1687/2SC4446] B Base C Collector E Emitter ( ) 2SA1687 SANYO MCP Specifi

Ordering number EN3794 NPN Triple Diffused Planar Silicon Transistor 2SC4441 Ultrahigh-Definition Monocuro Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast switching speed. 2041A High breakdown voltage. [2SC4441] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Mica

Ordering number EN3793 NPN Triple Diffused Planar Silicon Transistor 2SC4440 Ultrahigh-Definition Monochrome Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast switching speed. 2041A High brocking voltage. [2SC4440] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Mic

Ordering number EN3241 NPN Triple Diffused Planar Silicon Transistor 2SC4449 TV Camera Deflection, High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Small reverse transfer capacitance and excellent high 2003B frequency characteristic. [2SC4449] Excellent DC current gain. 5.0 4.0 4.0 Adoption of FBET process. 0.45 0.5

Product Specification www.jmnic.com Silicon Power Transistors 2SC4448 DESCRIPTION With TO-220F package High voltage ,high frequency APPLICATIONS Chroma output applications for HDTV Video output applications for high resolution display PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=

SMD Type Transistors NPN Transistors 2SC4443 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SA1685 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4448 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chroma output applications for HDTV Video output applications for high resolution display ABSOLU

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4442 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RA