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2SC5071 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC5071
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO3P

 Búsqueda de reemplazo de transistor bipolar 2SC5071

 

2SC5071 Datasheet (PDF)

 ..1. Size:183K  jmnic
2sc5071.pdf

2SC5071
2SC5071

JMnic Product Specification Silicon NPN Power Transistors 2SC5071 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

 ..2. Size:25K  sanken-ele
2sc5071.pdf

2SC5071

2SC5071Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol ConditionsSymbol 2SC5071 Unit 2SC5071 Unit0.24.80.415.6ICBO VCB=500VVCBO 500 V 100max A0.19.

 ..3. Size:179K  inchange semiconductor
2sc5071.pdf

2SC5071
2SC5071

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5071DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.2. Size:220K  toshiba
2sc5076.pdf

2SC5071
2SC5071

 8.3. Size:219K  toshiba
2sc5075.pdf

2SC5071
2SC5071

 8.4. Size:106K  sanyo
2sc5070.pdf

2SC5071
2SC5071

Ordering number:EN4473NPN Epitaxial Planar Silicon Transistor2SC5070Low-Frequency General-Purpose Amplifier,Driver ApplicationsFeatures Package Dimensions High current capacity.unit:mm Adoption of MBIT process.2084A High DC current gain.[2SC5070] Low collector-to-emitter saturation voltage.4.51.9 2.610.5 High VEBO.1.2 1.41.20.51.60.51 2

 8.5. Size:84K  panasonic
2sc5077.pdf

2SC5071
2SC5071

Power Transistors2SC5077, 2SC5077ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm4.6 0.2Features9.9 0.3 2.9 0.2High-speed switching 3.2 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package with outstanding insulation,

 8.6. Size:45K  hitachi
2sc5078.pdf

2SC5071
2SC5071

2SC5078Silicon NPN EpitaxialADE-208-2211st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz Typ High gain, low noise figurePG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHzOutlineMPAK-42311. Collector42. Emitter3. Base4. Emitter2SC5078Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCo

 8.7. Size:25K  hitachi
2sc5079.pdf

2SC5071
2SC5071

2SC5079Silicon NPN EpitaxialADE-208-2221st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 12 GHz Typ High gain, low noise figurePG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHzOutlineCMPAK42311. Collector42. Emitter3. Base4. Emitter2SC5079Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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