2SA2071 Todos los transistores

2SA2071 Datasheet Middle Power transistor (-60V, -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -60V IC -3A MPT3 lFeatures lInner circuit l l 1)High speed switching. 2)Low saturation voltage. (Typ. -200mV at IC=-2A, lB=-0.2A) 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SC5824 lA

ST 2SA2071U PNP Silicon Epitaxial Planar Transistor Lowe frequency amplifier and high speed switching Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Collector Current (Pw = 100 ms) -ICP 6 A 0.5 PC W Collector Power Dissipation 2 1

SMD Type Transistors PNP Transistors 2SA2071-Q SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-60V High speed switching. 0.42 0.1 Complements the 2SC5824 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Colle

2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (I = -0.1 A) C Low collector-emitter saturation voltage V = -0.20 V (max) CE (sat) High-speed switching t = 70 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2072 Features Dimensions (Unit mm) 1) High speed switching. ( tf Typ. 20ns at IC = -3A) 2) Low saturation voltage, typically. CPT3 (SC-63) (Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC582

2SA2073 Transistors High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2073 Dimensions (Unit mm) Features 1) High speed switching. ( tf Typ. 20ns at IC = -3A) ATV 2) Low saturation voltage, typically. (Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements t

Power Transistors 2SA2075 Silicon PNP epitaxial planar type Unit mm Power supply for Audio & Visual equipments 10.0 0.2 5.0 0.1 1.0 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.2 0.1 C 1.0 High-speed switching (tstg storage time/tf fall time is short) 1.48 0.2 2.25 0.2 Low collector-emitter saturation voltage VCE(sat) 0.

Transistors 2SA2077 Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SC5845 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packing. 1.9 0.1 2.90+0.

Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SC5846 0.33+0.05 0.10+0.05 0.02 0.02 3 Features High forward current transfer ratio hFE 0.23+0.05 1 2 0.02 SSS-Mini type package, allowing downsizing of the equipment (0.40)(0.40) and automatic insertion through the tape packing and the maga- 0.80 0.05

Power Transistors 2SA2074 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2