2SA2071 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA2071DatasheetMiddle Power transistor (-60V, -3A)lOutlinel SOT-89 Parameter Value SC-62 VCEO-60VIC-3AMPT3lFeatures lInner circuitl l1)High speed switching.2)Low saturation voltage. (Typ.:-200mV at IC=-2A, lB=-0.2A)3)Strong discharge power for inductive load and capacitance load.4)Complements the 2SC5824lA

ST 2SA2071U PNP Silicon Epitaxial Planar Transistor Lowe frequency amplifier and high speed switching Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 3 ACollector Current (Pw = 100 ms) -ICP 6 A0.5 PC W Collector Power Dissipation2 1

SMD Type TransistorsPNP Transistors2SA2071-QSOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-60V High speed switching.0.42 0.1 Complements the 2SC5824 0.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Colle

2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 200 to 500 (I = -0.1 A) C Low collector-emitter saturation voltage: V = -0.20 V (max) CE (sat) High-speed switching: t = 70 ns (typ.) fMaximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2072 Features Dimensions (Unit : mm) 1) High speed switching. ( tf : Typ. : 20ns at IC = -3A) 2) Low saturation voltage, typically. CPT3(SC-63):(Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC582

2SA2073 Transistors High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2073 Dimensions (Unit : mm) Features 1) High speed switching. ( tf : Typ. : 20ns at IC = -3A) ATV2) Low saturation voltage, typically. :(Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements t

Power Transistors2SA2075Silicon PNP epitaxial planar typeUnit: mmPower supply for Audio & Visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features1.20.1C 1.0 High-speed switching (tstg: storage time/tf: fall time is short)1.480.22.250.2 Low collector-emitter saturation voltage VCE(sat)0.

Transistors2SA2077Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SC58450.40+0.100.050.16+0.100.063 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and1 2automatic insertion through the tape packing and the magazine(0.95) (0.95)packing.1.90.12.90+0.

Transistors2SA2078Silicon PNP epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SC5846 0.33+0.05 0.10+0.050.02 0.023 Features High forward current transfer ratio hFE0.23+0.05 1 20.02 SSS-Mini type package, allowing downsizing of the equipment(0.40)(0.40)and automatic insertion through the tape packing and the maga-0.800.05

Power Transistors2SA2074Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2