2SA2072 Todos los transistores

High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2072 Features Dimensions (Unit mm) 1) High speed switching. ( tf Typ. 20ns at IC = -3A) 2) Low saturation voltage, typically. CPT3 (SC-63) (Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements the 2SC582

2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (I = -0.1 A) C Low collector-emitter saturation voltage V = -0.20 V (max) CE (sat) High-speed switching t = 70 ns (typ.) f Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

2SA2073 Transistors High voltage discharge, High speed switching, Low Noise (-60V, -3A) 2SA2073 Dimensions (Unit mm) Features 1) High speed switching. ( tf Typ. 20ns at IC = -3A) ATV 2) Low saturation voltage, typically. (Typ. -200mV at IC = -2.0A, IB = -200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Low Noise. 5) Complements t

2SA2071 Datasheet Middle Power transistor (-60V, -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -60V IC -3A MPT3 lFeatures lInner circuit l l 1)High speed switching. 2)Low saturation voltage. (Typ. -200mV at IC=-2A, lB=-0.2A) 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SC5824 lA

Power Transistors 2SA2075 Silicon PNP epitaxial planar type Unit mm Power supply for Audio & Visual equipments 10.0 0.2 5.0 0.1 1.0 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.2 0.1 C 1.0 High-speed switching (tstg storage time/tf fall time is short) 1.48 0.2 2.25 0.2 Low collector-emitter saturation voltage VCE(sat) 0.

Transistors 2SA2077 Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SC5845 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.95) (0.95) packing. 1.9 0.1 2.90+0.

Transistors 2SA2078 Silicon PNP epitaxial planar type For general amplification Unit mm Complementary to 2SC5846 0.33+0.05 0.10+0.05 0.02 0.02 3 Features High forward current transfer ratio hFE 0.23+0.05 1 2 0.02 SSS-Mini type package, allowing downsizing of the equipment (0.40)(0.40) and automatic insertion through the tape packing and the maga- 0.80 0.05

Power Transistors 2SA2074 Silicon PNP epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

ST 2SA2071U PNP Silicon Epitaxial Planar Transistor Lowe frequency amplifier and high speed switching Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Collector Current (Pw = 100 ms) -ICP 6 A 0.5 PC W Collector Power Dissipation 2 1

SMD Type Transistors PNP Transistors 2SA2071-Q SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-60V High speed switching. 0.42 0.1 Complements the 2SC5824 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Colle