2SA2094 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SA2094Datasheet PNP -2A -60V Middle Power TransistorlOutlineTSMT3Parameter ValueCollector VCEO-60VBase IC-2AEmitter 2SA2094 lFeatures(SC-96) 1) Suitable for Middle Power Driver2) Complementary NPN Types : 2SC58663) Low VCE(sat)VCE(sat)= -0.50V(Max.)(IC/IB= -1A / -0.1A)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMotor driver

2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications Unit: mmDC-DC Converter Applications High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation: VCE (sat) = -0.27 V (max) High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitColle

Ordering number : EN7331A2SA2099 / 2SC5888SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA2099 / 2SC5888High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.S

Ordering number : ENN74952SA2098 / 2SC5887PNP / NPN Epitaxial Planar Silicon Transistors2SA2098 / 2SC5887High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm2041AFeatures [2SA2098 / 2SC5887]4.5 Adoption of MBIT processes. 10.02.8 Large current capacitance.3.2 Low collector-to-emitter satu

1A / 60V Bipolar transistor 2SA2092 Features Dimensions (Unit : mm) 1) High speed switching. (tf : Typ. : 30ns at IC = 1A) TSMT32) Low saturation voltage. (Typ. : 200mV at IC = 500mA, IB = 50mA) 1.0MAX2.93) Strong discharge resistance for inductive load and 0.850.4 0.7capacitance load. 4) Low switching noise. ( )3Applications ( ) ( )1 2

2SA2093 Transistors Power transistor (-60V, -2A) 2SA2093 External dimensions (Unit : mm) Features 1) High speed switching. ATV2.56.8(Tf : Typ. : 30ns at IC = -2A) 2) Low saturation voltage, typically :(Typ. -200mV at IC = -1.0A, IB = -0.1A) 0.65Max.3) Strong discharge power for inductive load and 0.5(1) (2) (3)capacitance load. 2.54 2.541.05 0.45(1) Emi

2SA2090 Transistors Medium power transistor (-60V, -0.5A) 2SA2090 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 500mA) 2.8TSMT31.62) Low saturation voltage, typically. (Typ. : -150mV at IC = -100mA, IB = -10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5868. (1) Base0.3 ~ 0.6

2SA2091S Transistors Medium power transistor (-60V, -1A) 2SA2091S External dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = -1A) SPT 4.0 2.02) Low saturation voltage, typically (SC-72):(Typ. -200mV at IC = -0.5A, IB = -50mA) 3) Strong discharge power for inductive load and 0.45capacitance load. 2.50.5 0.454) Complements the 2SC

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2097DESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers, high-speed inverters , convertersOther general high current sw