2SA2094 Todos los transistores

2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline TSMT3 Parameter Value Collector VCEO -60V Base IC -2A Emitter 2SA2094 lFeatures (SC-96) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SC5866 3) Low VCE(sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications Motor driver

2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation VCE (sat) = -0.27 V (max) High-speed switching tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Colle

Ordering number EN7331A 2SA2099 / 2SC5888 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. S

Ordering number ENN7495 2SA2098 / 2SC5887 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2098 / 2SC5887 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit mm 2041A Features [2SA2098 / 2SC5887] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter satu

1A / 60V Bipolar transistor 2SA2092 Features Dimensions (Unit mm) 1) High speed switching. (tf Typ. 30ns at IC = 1A) TSMT3 2) Low saturation voltage. (Typ. 200mV at IC = 500mA, IB = 50mA) 1.0MAX 2.9 3) Strong discharge resistance for inductive load and 0.85 0.4 0.7 capacitance load. 4) Low switching noise. ( ) 3 Applications ( ) ( ) 1 2

2SA2093 Transistors Power transistor (-60V, -2A) 2SA2093 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 30ns at IC = -2A) 2) Low saturation voltage, typically (Typ. -200mV at IC = -1.0A, IB = -0.1A) 0.65Max. 3) Strong discharge power for inductive load and 0.5 (1) (2) (3) capacitance load. 2.54 2.54 1.05 0.45 (1) Emi

2SA2090 Transistors Medium power transistor (-60V, -0.5A) 2SA2090 Dimensions (Unit mm) Features 1) High speed switching. (Tf Typ. 35ns at IC = 500mA) 2.8 TSMT3 1.6 2) Low saturation voltage, typically. (Typ. -150mV at IC = -100mA, IB = -10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5868. (1) Base 0.3 0.6

2SA2091S Transistors Medium power transistor (-60V, -1A) 2SA2091S External dimensions (Unit mm) Features 1) High speed switching. (Tf Typ. 30ns at IC = -1A) SPT 4.0 2.0 2) Low saturation voltage, typically (SC-72) (Typ. -200mV at IC = -0.5A, IB = -50mA) 3) Strong discharge power for inductive load and 0.45 capacitance load. 2.5 0.5 0.45 4) Complements the 2SC

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2097 DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers, high-speed inverters , converters Other general high current sw