2SC5824 Todos los transistores

2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline MPT3 Parameter Value VCEO 60 Base IC 3A Collector Emitter 2SC5824 Features (SC-62) 1) Suitable for Middle Power Driver 2) Complementary PNP Types 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.) (IC/IB=2A/200mA) 4) Lead Free/RoHS Compliant. Inner circuit Collector Applications Motor drive

SMD Type Transistors NPN Transistors 2SC5824 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=60V High-speed switching. 0.42 0.1 0.46 0.1 Low saturation voltage Complements the 2SA2071 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Bas

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SC5825 Transistors Power transistor (60V, 3A) 2SC5825 Dimensions (Unit mm) Features 1) High speed switching. CPT3 (Tf Typ. 30ns at IC = 3A) (SC-63) 2) Low saturation voltage, typically (Typ. 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2073 (1) Base (2) Collector Applica

2SC5826 Transistors Power transistor (60V, 3A) 2SC5826 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 2A, IB = 0.2mA) 0.65Max. 3) Strong discharge power for inductive load and 0.5 capacitance load. (1) (2) (3) (1) Emitter 2.54 2.54 4) Compleme

2SC5827 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE 208 1464(Z) Rev.0 Nov. 2001 Features Super compact package MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is WW . 2SC5827 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter volta