2SC5876 Todos los transistores

 

2SC5876 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC5876
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: UMT3
 

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2SC5876 datasheet

 ..1. Size:1647K  rohm
2sc5876.pdf pdf_icon

2SC5876

2SC5876 Datasheet Medium power transistor (60V, 0.5A) lOutline l Parameter Value UMT3 VCEO 60V IC 500mA SOT-323 SC-70 lFeatures l 1)High speed switching. lInner circuit l (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for

 0.1. Size:1603K  rohm
2sc5876u3.pdf pdf_icon

2SC5876

2SC5876U3 Datasheet Medium power transistor (60V, 0.5A) lOutline l SOT-323 Parameter Value SC-70 VCEO 60V IC 500mA UMT3 lFeatures lInner circuit l l 1)High speed switching. (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for inductive load and ca

 0.2. Size:1239K  rohm
2sc5876fra.pdf pdf_icon

2SC5876

AEC-Q101 Qualified Medium power transistor (60V, 0.5A) 2SC5876FRA Features Dimensions (Unit mm) 1) High speed switching. (Tf Typ. 80ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. 150mV at IC = 100mA, IB = 10mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 2SA2088FRA 4) Complements the 2SA2088 0.1Min. Each lea

 8.1. Size:98K  rohm
2sc5875.pdf pdf_icon

2SC5876

2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max. 3) Strong discharge power for inductive load and 0.5 (1) (2) (3) capacitance load. 2.54 2.54 1.05 0.45 (1) Emitter

Otros transistores... 2SC5658 , 2SC5659 , 2SC5661 , 2SC5662 , 2SC5663 , 2SC5824 , 2SC5825 , 2SC5866 , TIP32C , 2SCR293P , 2SCR372P , 2SCR512P , 2SCR513P , 2SCR514P , 2SCR514R , 2SCR522EB , 2SCR522M .

History: 2SCR513P | 2SA1774-R

 

 

 


 
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