2SCR514R
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SCR514R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 320
MHz
Capacitancia de salida (Cc): 6
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
TSMT3
Búsqueda de reemplazo de transistor bipolar 2SCR514R
2SCR514R
Datasheet (PDF)
..1. Size:1743K rohm
2scr514r.pdf 
2SCR514RDatasheetNPN 0.7A 80V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO80VIC0.7ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR514R1)Low saturation voltage, typicallyVCE(sat)=300mV(Max.)(IC/ IB=300mA/15mA)l
7.1. Size:1890K rohm
2scr514p.pdf
2SCR514PDatasheetMiddle Power Transistors (80V / 700mA)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC0.7AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=300mV (Max.) (IC/IB=300mA/15mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
7.2. Size:1310K rohm
2scr514pfra.pdf
2SCR514P2SCR514PFRADatasheetNPN 0.7A 80V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO80VBase IC Collector 0.7AEmitter 2SCR514PFRA2SCR514P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR514P2SAR514PFRA3) Low VCE(sat)VCE(sat)=0.30V(Max.)(IC/IB=300mA/15mA)4) Lead Free/RoHS
8.1. Size:1584K rohm
2scr513p5.pdf
2SCR513P5DatasheetMedium Power Transistors (50V / 1V)lOutlinel SOT-89 Parameter Value SC-62 VCEO50VIC1AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=-0.35V(Max.)(IC/IB=500mA/25mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifi
8.2. Size:484K rohm
2scr513p.pdf
2SCR513PDatasheetNPN 1.0A 50V Middle Power TransistorlOutline MPT3Parameter ValueVCEO50VBase IC1.0A Collector Emitter 2SCR513P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR513P3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS Compliant.lInner circuitCollector lApplicationsMoto
8.3. Size:1789K rohm
2scr512r.pdf
2SCR512RDatasheetNPN 2.0A 30V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO30VIC2ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR512R3)Low VCE(sat)VCE(sat)=400mV(Max.)(IC/IB=700mA/35mA)lApplicationlLOW FREQ
8.4. Size:1764K rohm
2scr513r.pdf
2SCR513RDatasheetNPN 1.0A 50V Middle Power TransistorlOutlinelParameter Value TSMT3VCEO50VIC1ASOT-346TSC-96 lFeaturesl1)Suitable for Middle Power DriverlInner circuitl2)Complementary PNP Types:2SAR513R3)Low VCE(sat)VCE(sat)=350mV (Max.)(IC/IB=500mA/25mA)lApplicationlLOW FRE
8.5. Size:1814K rohm
2scr512p5.pdf
2SCR512P5DatasheetMidium Power Transistors (30V / 2V)lOutlinel SOT-89 Parameter Value SC-62 VCEO30VIC2AMPT3lFeatures lInner circuitl l1)Low saturation voltage, typicallyVCE(sat)=0.4V(Max.)(IC/IB=700mA/35mA)2)High speed switchinglApplicationlLOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHINGlPackaging specifica
8.6. Size:1308K rohm
2scr513pfra.pdf
2SCR513P2SCR513PFRADatasheetNPN 1.0A 50V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO50VBase IC1.0A Collector Emitter 2SCR513PFRA2SCR513P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR513P2SAR513PFRA3) Low VCE(sat)VCE(sat)=0.35V(Max.)(IC/IB=500mA/25mA)4) Lead Free/RoHS
8.7. Size:237K rohm
2scr512p.pdf
Midium Power Transistors (30V / 2A) 2SCR512P Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistor Features1) Low saturation voltage, typicallyVCE (sat) = 0.4V (Max.) (IC / IB= 700mA / 35mA)(1) (2) (3)2) High speed switching ApplicationsAbbreviated symbol : NBDriver Packaging specifications Inner circuit (Unit : mm)Package Taping
8.8. Size:1314K rohm
2scr512pfra.pdf
2SCR512P2SCR512PFRADatasheetNPN 2.0A 30V Middle Power TransistorAEC-Q101 QualifiedlOutline MPT3Parameter ValueVCEO30VBase IC2.0A Collector Emitter 2SCR512PFRA2SCR512P lFeatures(SC-62) 1) Suitable for Middle Power Driver2) Complementary PNP Types : 2SAR512P2SAR512PFRA3) Low VCE(sat)VCE(sat)=0.40V(Max.)(IC/IB=700mA/35mA)4) Lead Free/RoHS
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