2SD1781K Todos los transistores

2SD1781K Datasheet Medium Power Transistor (32V, 800mA) lOutline l Parameter Value SMT3 VCEO 32V IC 800mA SOT-346 SC-59 lFeatures l 1)Very low VCE(sat). lInner circuit l VCE(sat)=0.1V(Typ.) (IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)Complements the 2SB1197K. lApplication l

2SD1781K SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Low voltage High saturation current capability 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emit

2SD1781KFRA 2SD1781K Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.8A) 2SD1781K 2SD1781KFRA External dimensions (Unit mm) Features 1) Very Low VCE(sat). 2.9 0.2 VCE(sat) = 0.1V(Typ.) 1.1+0.2 1.9 0.2 -0.1 IC / IB= 500 A / 50mA 0.8 0.1 0.95 0.95 2) High current capacity in compact package. (1) (2) 0 0.1 3) Complements the 2SB1197K 2SB1197K. (3) +0

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series S-L2SD1781KQLT1G Series (32V, 0.8A) L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 1 2) High current capacity in compact 2 package. 3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB 4) We declare that the material of product compliance with RoHS requireme

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SD1781KQLT1G Series (32V, 0.8A) S-L2SD1781KQLT1G Series L2SD1781KQLT1G FFeatures 3 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) 1 (IC / IB = 500mA / 50mA) 2) High current capacity in compact 2 package. SOT-23 /TO-236AB 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirem

CHENMKO ENTERPRISE CO.,LTD 2SD1781KGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1500mA). * Suitable for high packing density. * Low voltage (Max.=32V) . * High satur

2SD1781K Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To 2SB1197K Excellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current. MAXIMUM RATING @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) REV.08 1 of 4 2SD1781K ELECTRICAL CHARACTERISTICS @ Ta=25 unle