2SD2351 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2351
Código: BJV_BJW
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hFE): 820
Encapsulados: UMT3
SC-70
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2SD2351 datasheet
..1. Size:1225K rohm
2sd2351.pdf 
2SD2351 Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-323 Parameter Value SC-70 VCEO 50V IC 150mA UMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max. VCE(sat)=300mV at IC/ IB=50mA/5mA) lApplication l LOW FREQUENCY AMPLIFIER lPack
..2. Size:85K rohm
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base
8.3. Size:39K panasonic
2sd2359 e.pdf
Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 3.0
8.4. Size:39K panasonic
2sd2357 e.pdf
Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1537 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.
8.5. Size:45K panasonic
2sd2358.pdf
Transistors 2SD2358 Silicon NPN epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency output amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1538 Features 0.65 max. Low collector to emitter saturation voltage VCE(sat)
8.6. Size:35K panasonic
2sd2359.pdf
Transistor 2SD2359 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment 45 and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 3.0
8.7. Size:36K panasonic
2sd2357.pdf
Transistor 2SD2357 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1537 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 0.
8.8. Size:69K wingshing
2sd235.pdf
2SD235 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SB435 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 40 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25 PC 25 W Junction
8.9. Size:426K blue-rocket-elect
2sd2353.pdf
2SD2353(BR3DA2353F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features ,V CESAT High DC current gain ,low collector saturation voltage. / Applications For power amplification. / E
8.10. Size:822K kexin
2sd2359.pdf
SMD Type Transistors NPN Transistors 2SD2359 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SB1539 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Col
8.11. Size:823K kexin
2sd2357.pdf
SMD Type Transistors NPN Transistors 2SD2357 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. Complementary to 2SB1537 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collector - Emitter Voltage VCE
8.12. Size:213K inchange semiconductor
2sd235.pdf
isc Silicon NPN Power Transistor 2SD235 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB435 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXI
Otros transistores... 2SD1757K, 2SD1781K, 2SD1782K, 2SD2114K, 2SD2142K, 2SD2143, 2SD2153, 2SD2226K, 13009, 2SD2391, 2SD2444K, 2SD2537, 2SD2652, 2SD2653K, 2SD2653, 2SD2654, 2SD2656
