2SD2652 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2652
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 400 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hFE): 270
Encapsulados: UMT3
SC-70
SOT-323
Búsqueda de reemplazo de 2SD2652
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2SD2652 datasheet
..1. Size:77K rohm
2sd2652.pdf 
2SD2652 Transistors General purpose amplification (12V, 1.5A) 2SD2652 External dimensions (Units mm) Application Low frequency amplifier Features 1.25 1) A collector current is large. 2.1 2) Collector saturation voltage is low. VCE(sat) 200mV 0.1Min. At IC = 500mA / IB = 25mA Each lead has same dimensions ROHM UMT3 (1) Emitter Abbreviated symbol EW EIAJ SC-70 (2
8.1. Size:29K sanyo
2sd2650.pdf
Ordering number ENN6781A 2SD2650 NPN Triple Diffused Planar Silicon Transistor 2SD2650 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2650] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Ba
8.2. Size:31K sanyo
2sd2658ls.pdf
Ordering number ENN7168 2SD2658LS NPN Triple Diffused Planar Silicon Transistor 2SD2658LS Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2079D High reliability (Adoption of HVP process). [2SD2658LS] Adoption of MBIT process. 10.0 4.5 3.2 2.8 On-chip damper diode. 0
8.3. Size:101K renesas
r07ds0281ej 2sd2655-1.pdf
Preliminary Datasheet 2SD2655 R07DS0281EJ0300 (Previous REJ03G0810-0200) Silicon NPN Epitaxial Planer Rev.3.00 Low Frequency Power Amplifier Mar 28, 2011 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation PC = 800 mW
8.4. Size:90K rohm
2sd2653.pdf
2SD2653 Transistors Low frequency amplifier 2SD2653 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. 2) VCE(sat) 180mV ( ) ( ) 1 2 0.95 0.95 at IC = 1A / IB = 50mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute m
8.5. Size:1309K rohm
2sd2656fra.pdf
2SD2656 2SD2656FRA Datasheet NPN 1A 30V Low Frequency Amplifier Transistors AEC-Q101 Qualified lOutline UMT3 Parameter Value Collector VCEO 30V Base IC 1A Emitter 2SD2656FRA 2SD2656 SOT-323 (SC-70) lFeatures 1) A Collecotr current is large.General Purpose. 2) Collector saturation voltage is low. VCE(sat) is Max. 350mV At IC=500mA, IB=25mA 3) Complementary PNP Types 2S
8.6. Size:121K rohm
2sd2653k.pdf
2SD2653K Transistors Low frequency amplifier 2SD2653K External dimensions (Units mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 180mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions Abbreviated symbol FW (1) Emitter ROHM SMT3 EIAJ SC-59 (2) Base JEDEC SOT-346 (3) Collector Absolute m
8.7. Size:77K rohm
2sd2656.pdf
2SD2656 Transistors General purpose amplification (30V, 1A) 2SD2656 Application Low frequency amplifier 1.25 Features 2.1 1) A collector current is large. 2) Collector saturation voltage is low. 0.1Min. VCE(sat) 350mV Each lead has same dimensions At IC = 500mA / IB = 25mA ROHM UMT3 (1) Emitter Abbreviated symbol EU EIAJ SC-70 (2) Base JEDEC SOT-323 (
8.8. Size:75K rohm
2sd2657k-1.pdf
2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 350mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions ROHM SMT3 Abbreviated symbol FZ (1) Emitter EIAJ SC-59 (2) Base JEDEC SOT-346 (3) Collector
8.9. Size:943K rohm
2sd2657kfra.pdf
2SD2657KFRA AEC-Q101 Qualified 2SD2657KFRA
8.10. Size:67K rohm
2sd2657.pdf
2SD2657 Transistors Low frequency amplifier 2SD2657 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. 1 2 2) VCE(sat) max.350mV ( ) ( ) 0.95 0.95 0.16 At IC = 1A / IB = 50mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Packaging
8.11. Size:1233K rohm
2sd2654.pdf
2SD2654 Datasheet General purpose Transistor (50V, 150mA) lOutline l SOT-416 Parameter Value SC-75A VCEO 50V IC 150mA EMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA) lApplication l LOW FREQUENCY AMPLIFIER, DRIVER
8.12. Size:73K rohm
2sd2657k.pdf
2SD2657K Transistors Low frequency amplifier 2SD2657K External dimensions (Units mm) Application Low frequency amplifier Driver 1.6 Features 2.8 1) A collector current is large. 2) VCE(sat) 350mV 0.3Min. At IC = 1A / IB = 50mA Each lead has same dimensions ROHM SMT3 Abbreviated symbol FZ (1) Emitter EIAJ SC-59 (2) Base JEDEC SOT-346 (3) Collector
8.13. Size:85K rohm
2sd2654 2sd2707 2sd2654 2sd2351 2sd2226k 2sd2227s.pdf
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base
8.14. Size:63K panasonic
2sd2659.pdf
Power Transistors 2SD2659 Silicon NPN triple diffusion planar type Unit mm 4.6 0.2 For power switching 9.9 0.3 2.9 0.2 3.2 0.1 Features High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE TO-220D built-in Excellent package with withstand voltage 5 kV guaranteed 1.4 0.2 2.6 0.1 1.6 0.2 0.8 0.1 0.55 0.1
8.15. Size:41K hitachi
2sd2651.pdf
2SD2651 Silicon NPN Epitaxial High Voltage Amplifier ADE-208-976 (Z) 1st. Edition October 2000 Features High breakdown voltage VCEO = -300V min Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2651 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltag
8.16. Size:75K hitachi
2sd2655.pdf
2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier ADE-208-1388A (Z) Rev.1 Jun. 2001 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) Comple
Otros transistores... 2SD2142K, 2SD2143, 2SD2153, 2SD2226K, 2SD2351, 2SD2391, 2SD2444K, 2SD2537, 2N2222A, 2SD2653K, 2SD2653, 2SD2654, 2SD2656, 2SD2657K, 2SD2657, 2SD2661, 2SD2662
