2SD2674 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2674
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 400 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hFE): 270
Encapsulados: TSMT3
Búsqueda de reemplazo de 2SD2674
- Selecciónⓘ de transistores por parámetros
2SD2674 datasheet
2sd2674.pdf
2SD2674 Datasheet General purpose amplification (12V, 1.5A) lOutline l SOT-346T Parameter Value SC-96 VCEO 12V IC 1.5A TSMT3 lFeatures lInner circuit l l 1)A collector current is large. 2)Collector saturation voltage is low. VCE(sat) 200mV at IC=500mA/IB=25mA lApplication l LOW FREQUENCY AMPLIFIER lPackaging specificat
2sd2670.pdf
2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) max.250mV 0.95 0.95 0.16 At lc=1.5A / lB=30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Abso
2sd2671.pdf
2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. 2) VCE(sat) max. 370mV (1) (2) 0.95 0.95 At lc=1.5A / lB=75mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute maxi
2sd2678.pdf
2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XX NPN epitaxial planar silicon transistor
Otros transistores... 2SD2657K, 2SD2657, 2SD2661, 2SD2662, 2SD2670, 2SD2671, 2SD2672, 2SD2673, A940, 2SD2675, 2SD2696, 2SD2700, 2SD2701, 2SD2702, 2SD2703, 2SD2704K, 2SD2707
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfb7437 | tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c | d331 transistor








