DTC044EM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DTC044EM  📄📄 

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 47 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 40 V

Corriente del colector DC máxima (Ic): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: SC-105AA VMT3 SOT723

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DTC044EM datasheet

 7.1. Size:301K  rohm
dtc044eeb.pdf pdf_icon

DTC044EM

100mA/50V Digital transistors(with built-in resistors) DTC044EM / DTC044EEB / DTC044EUB Features Dimensions (Unit mm) 1) Built-in bias resistors enable the configuration of VMT3 an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the i

 8.1. Size:296K  rohm
dtc044teb.pdf pdf_icon

DTC044EM

100mA/50V Digital transistors(with built-in resistors) DTC044TM / DTC044TEB / DTC044TUB Features Dimensions (Unit mm) 1) Built-in bias resistors enable the configuration of VMT3 an inverter circuit without connecting external input resistors. (See equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the i

 8.2. Size:1035K  rohm
dtc044teb dtc044tm dtc044tub.pdf pdf_icon

DTC044EM

DTC044T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCEO 50V IC 60mA R1 47k DTC044TM DTC044TEB (SC-105AA) (SC-89) UMT3F lFeatures l 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the

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