DTC143XEB
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC143XEB
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 20
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SC-89
EMT3F
SOT416FL
Búsqueda de reemplazo de transistor bipolar DTC143XEB
DTC143XEB
Datasheet (PDF)
..1. Size:59K rohm
dtc143xeb.pdf
Transistors DTC143XEB 100mA / 50V Digital transistors (with built-in resistors) DTC143XEB Applications Dimensions (Unit : mm)Inverter, Interface, DriverEMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting externalinput resistors (see equivalent circuit). 2) The bias resistors con
6.1. Size:55K motorola
pdtc143xe 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143XENPN resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143XEFEATURES Built-in bias resistors R1 and R2 (typ. 4.7 k and 10 krespectively) Simplification of circuit designhandbook, halfpage
6.2. Size:55K philips
pdtc143xe 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143XENPN resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143XEFEATURES Built-in bias resistors R1 and R2 (typ. 4.7 k and 10 krespectively) Simplification of circuit designhandbook, halfpage
6.3. Size:141K rohm
dtc143x-ser dtc143xe.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC143XM / DTC143XE / DTC143XUA / DTC143XKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati
6.4. Size:1525K rohm
dtc143xefra dtc143xkafra dtc143xmfha dtc143xuafra.pdf
DTC143X seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143XM DTC143XEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC143XE DTC143
6.5. Size:237K diodes
ddtc143xe.pdf
DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60
6.6. Size:272K lrc
ldtc143xet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorNPN Silicon Surface Mount TransistorLDTC143XET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist
6.7. Size:158K chenmko
chdtc143xegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC143XEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416)SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation
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