DTD743EM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTD743EM
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 20 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 260 MHz
Ganancia de corriente contínua (hfe): 115
Paquete / Cubierta: SC-105AA VMT3 SOT723
Búsqueda de reemplazo de transistor bipolar DTD743EM
DTD743EM Datasheet (PDF)
dtd743ee.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743EE / DTD743EM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD723YE1.6 0.7 0.550.3( )3 Feature ( ) ( )2 10.2 0.21. VCE (sat) is lower than the conventional products. 0.15(1) GND0.5 0.52. Built-in bias resistors enable the configuration of (2) IN1.0EMT3
dtd743ze.pdf
DTD743ZE / DTD743ZM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743ZE / DTD743ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD743ZE1.6 0.70.550.3 Feature ( )31) VCE(sat) is lower than conventional products. ( ) ( )2 12) Built-in bias resistors enable the configuration of an 0.2 0.20.15(1)
dtd743xe.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743XE / DTD743XM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD743XE1.6 0.70.550.3Feature ( )31) VCE(sat) is lower than the conventional products. ( ) ( )2 12) Built-in bias resistors enable the configuration of an 0.2 0.20.15(1) GND0.5 0.5inverter cir
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
