DTD743XE Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTD743XE
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 20 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 260 MHz
Ganancia de corriente contínua (hFE): 140
Encapsulados: EMT3
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DTD743XE datasheet
dtd743xe.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743XE / DTD743XM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD743XE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE(sat) is lower than the conventional products. ( ) ( ) 2 1 2) Built-in bias resistors enable the configuration of an 0.2 0.2 0.15 (1) GND 0.5 0.5 inverter cir
dtd743ee.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743EE / DTD743EM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD723YE 1.6 0.7 0.55 0.3 ( ) 3 Feature ( ) ( ) 2 1 0.2 0.2 1. VCE (sat) is lower than the conventional products. 0.15 (1) GND 0.5 0.5 2. Built-in bias resistors enable the configuration of (2) IN 1.0 EMT3
dtd743ze.pdf
DTD743ZE / DTD743ZM Transistors 200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD743ZE / DTD743ZM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD743ZE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE(sat) is lower than conventional products. ( ) ( ) 2 1 2) Built-in bias resistors enable the configuration of an 0.2 0.2 0.15 (1)
Otros transistores... DTD543ZE , DTD543ZM , DTD713ZE , DTD713ZM , DTD723YE , DTD723YM , DTD743EE , DTD743EM , D880 , DTD743XM , DTD743ZE , DTD743ZM , DTDG23YP , KT209B1 , KT209V1 , KT209Zh , KT220A9 .
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