2SA1679 Todos los transistores

 ..1. Size:149K  jmnic
 2sa1679.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1679 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

 ..2. Size:285K  shindengen
 2sa1679.pdf

SHINDENGEN Switching Power Transistor LSV Series OUTLINE DIMENSIONS 2SA1679 Case ITO-220 Unit mm (TP5T4) -5A PNP RATINGS

 ..3. Size:192K  inchange semiconductor
 2sa1679.pdf

isc Silicon PNP Power Transistor 2SA1679 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -40(V)(Min.) CEO(SUS) Low Collector Saturation Voltage V = -0.3(V)(Max.)@I = -2.5A CE(sat) C Large Current Capability-I = -5A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for mid-switching applications, and is idea

 8.1. Size:39K  panasonic
 2sa1674.pdf

Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC4391 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0

 8.2. Size:44K  panasonic
 2sa1674 e.pdf

Transistor 2SA1674 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC4391 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0

 8.3. Size:176K  jmnic
 2sa1670.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1670 DESCRIPTION With TO-3PML package Complement to type 2SC4385 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

 8.4. Size:186K  jmnic
 2sa1671.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1671 DESCRIPTION With TO-3PML package Complement to type 2SC4386 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

 8.5. Size:211K  jmnic
 2sa1673.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1673 DESCRIPTION With TO-3PML package Complement to type 2SC4388 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

 8.6. Size:165K  jmnic
 2sa1672.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1672 DESCRIPTION With TO-3PML package Complement to type 2SC4387 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

 8.7. Size:203K  sanken-ele
 2sa1670.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.8. Size:28K  sanken-ele
 2sa1673.pdf

2SA1673 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388) Application Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 180 V ICBO VCB= 180V 10max A VCEO 180 V IEBO VEB= 6V

 8.9. Size:203K  sanken-ele
 2sa1672.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.10. Size:217K  inchange semiconductor
 2sa1670.pdf

isc Silicon PNP Power Transistor 2SA1670 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4385 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 8.11. Size:217K  inchange semiconductor
 2sa1671.pdf

isc Silicon PNP Power Transistor 2SA1671 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4386 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 8.12. Size:222K  inchange semiconductor
 2sa1673.pdf

isc Silicon PNP Power Transistor 2SA1673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4388 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 8.13. Size:216K  inchange semiconductor
 2sa1672.pdf

isc Silicon PNP Power Transistor 2SA1672 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC4387 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN